JPS5874079A - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number
JPS5874079A
JPS5874079A JP56173308A JP17330881A JPS5874079A JP S5874079 A JPS5874079 A JP S5874079A JP 56173308 A JP56173308 A JP 56173308A JP 17330881 A JP17330881 A JP 17330881A JP S5874079 A JPS5874079 A JP S5874079A
Authority
JP
Japan
Prior art keywords
film
insulating film
film thickness
thickness
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56173308A
Other languages
English (en)
Japanese (ja)
Inventor
Yutaka Takato
裕 高藤
Kohei Kishi
岸　幸平
Hiroaki Kato
博章 加藤
Fumiaki Funada
船田　文明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Sharp Corp filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP56173308A priority Critical patent/JPS5874079A/ja
Priority to GB08230385A priority patent/GB2111302B/en
Priority to DE19823239679 priority patent/DE3239679A1/de
Publication of JPS5874079A publication Critical patent/JPS5874079A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP56173308A 1981-10-28 1981-10-28 薄膜トランジスタ Pending JPS5874079A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56173308A JPS5874079A (ja) 1981-10-28 1981-10-28 薄膜トランジスタ
GB08230385A GB2111302B (en) 1981-10-28 1982-10-25 Thin film transistor
DE19823239679 DE3239679A1 (de) 1981-10-28 1982-10-27 Duennfilm-transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56173308A JPS5874079A (ja) 1981-10-28 1981-10-28 薄膜トランジスタ

Publications (1)

Publication Number Publication Date
JPS5874079A true JPS5874079A (ja) 1983-05-04

Family

ID=15958037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56173308A Pending JPS5874079A (ja) 1981-10-28 1981-10-28 薄膜トランジスタ

Country Status (3)

Country Link
JP (1) JPS5874079A (enExample)
DE (1) DE3239679A1 (enExample)
GB (1) GB2111302B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04183866A (ja) * 1990-11-16 1992-06-30 Matsushita Electric Ind Co Ltd 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置
US7335552B2 (en) * 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118484A (enExample) * 1974-06-21 1976-02-14 Westinghouse Electric Corp
JPS54127699A (en) * 1978-03-27 1979-10-03 Sharp Corp Matrix-type liquid crystal display unit
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499576A (en) * 1978-01-23 1979-08-06 Sharp Corp Thin-film transistor and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118484A (enExample) * 1974-06-21 1976-02-14 Westinghouse Electric Corp
JPS54127699A (en) * 1978-03-27 1979-10-03 Sharp Corp Matrix-type liquid crystal display unit
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04183866A (ja) * 1990-11-16 1992-06-30 Matsushita Electric Ind Co Ltd 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置
US7335552B2 (en) * 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices
US7545625B2 (en) 2002-05-15 2009-06-09 Raytheon Company Electrode for thin film capacitor devices

Also Published As

Publication number Publication date
GB2111302B (en) 1985-11-27
GB2111302A (en) 1983-06-29
DE3239679C2 (enExample) 1987-10-22
DE3239679A1 (de) 1983-05-11

Similar Documents

Publication Publication Date Title
EP0383743B1 (en) Thin film transistor
JP2757207B2 (ja) 液晶表示装置
US4469568A (en) Method for making thin-film transistors
KR100505900B1 (ko) 전계 효과 트랜지스터 및 그 제조 방법
JPH04367211A (ja) Ｉｃにおける強誘電性キャパシタおよびその製造方法
JPS58147069A (ja) 薄膜トランジスタ
EP0165027A2 (en) Thin film field effect transistors utilizing a polypnictide semiconductor
Egret et al. Diamond-like carbon metal-semiconductor-metal switches for active matrix displays
JPH0348671B2 (enExample)
JPS5874079A (ja) 薄膜トランジスタ
JP2003273134A (ja) 成膜方法及び半導体装置の製造方法
KR100364650B1 (ko) 박막 2단자 소자, 그 제조 방법 및 액정 표시 장치
JPS63160286A (ja) Ｍｉｍダイオード
JPS63216378A (ja) 薄膜トランジスタ
JPH02190826A (ja) 液晶駆動用二端子素子
KR970000461B1 (ko) 경사진 게이트전극을 갖는 박막트랜지스터의 제조방법
US7545452B2 (en) TFD LCD device with high aperture ratio
JPH0377670B2 (enExample)
JP2594384B2 (ja) 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置
JPS60132368A (ja) 薄膜トランジスタ
US6005260A (en) Non-linear switching element of an electro-optical display device with metallic protective layer
JPS6130018A (ja) 薄膜コンデンサおよびその製造方法
KR950003959B1 (ko) 강유전체 박막센서의 구조 및 제조방법
JPH0336313B2 (enExample)
JPH04360506A (ja) 薄膜キャパシタ