JPS5871661A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS5871661A
JPS5871661A JP56169812A JP16981281A JPS5871661A JP S5871661 A JPS5871661 A JP S5871661A JP 56169812 A JP56169812 A JP 56169812A JP 16981281 A JP16981281 A JP 16981281A JP S5871661 A JPS5871661 A JP S5871661A
Authority
JP
Japan
Prior art keywords
film
metal
semiconductor
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56169812A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0353787B2 (cs
Inventor
Kanetaka Sekiguchi
金孝 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP56169812A priority Critical patent/JPS5871661A/ja
Publication of JPS5871661A publication Critical patent/JPS5871661A/ja
Publication of JPH0353787B2 publication Critical patent/JPH0353787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP56169812A 1981-10-23 1981-10-23 薄膜トランジスタの製造方法 Granted JPS5871661A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56169812A JPS5871661A (ja) 1981-10-23 1981-10-23 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56169812A JPS5871661A (ja) 1981-10-23 1981-10-23 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5871661A true JPS5871661A (ja) 1983-04-28
JPH0353787B2 JPH0353787B2 (cs) 1991-08-16

Family

ID=15893352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169812A Granted JPS5871661A (ja) 1981-10-23 1981-10-23 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5871661A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177967A (ja) * 1983-03-28 1984-10-08 Komatsu Ltd 薄膜トランジスタ及びその製造方法
JPS62271471A (ja) * 1986-05-20 1987-11-25 Sanyo Electric Co Ltd 薄膜トランジスタ
US4754614A (en) * 1986-02-07 1988-07-05 Mitsubishi Denki Kabushiki Kaisha Prime-motor-driven room warming/cooling and hot water supplying apparatus
EP0506117A3 (en) * 1991-03-29 1995-09-27 Casio Computer Co Ltd Thin-film transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177967A (ja) * 1983-03-28 1984-10-08 Komatsu Ltd 薄膜トランジスタ及びその製造方法
US4754614A (en) * 1986-02-07 1988-07-05 Mitsubishi Denki Kabushiki Kaisha Prime-motor-driven room warming/cooling and hot water supplying apparatus
JPS62271471A (ja) * 1986-05-20 1987-11-25 Sanyo Electric Co Ltd 薄膜トランジスタ
EP0506117A3 (en) * 1991-03-29 1995-09-27 Casio Computer Co Ltd Thin-film transistor

Also Published As

Publication number Publication date
JPH0353787B2 (cs) 1991-08-16

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