JPS5867073A - 太陽電池 - Google Patents

太陽電池

Info

Publication number
JPS5867073A
JPS5867073A JP56165829A JP16582981A JPS5867073A JP S5867073 A JPS5867073 A JP S5867073A JP 56165829 A JP56165829 A JP 56165829A JP 16582981 A JP16582981 A JP 16582981A JP S5867073 A JPS5867073 A JP S5867073A
Authority
JP
Japan
Prior art keywords
layer
layers
solar cell
doped amorphous
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56165829A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6330789B2 (https=
Inventor
Kazuhiko Sato
和彦 佐藤
Genshiro Nakamura
中村　源四郎
Yoshinori Yukimoto
行本　善則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56165829A priority Critical patent/JPS5867073A/ja
Publication of JPS5867073A publication Critical patent/JPS5867073A/ja
Publication of JPS6330789B2 publication Critical patent/JPS6330789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP56165829A 1981-10-19 1981-10-19 太陽電池 Granted JPS5867073A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56165829A JPS5867073A (ja) 1981-10-19 1981-10-19 太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56165829A JPS5867073A (ja) 1981-10-19 1981-10-19 太陽電池

Publications (2)

Publication Number Publication Date
JPS5867073A true JPS5867073A (ja) 1983-04-21
JPS6330789B2 JPS6330789B2 (https=) 1988-06-21

Family

ID=15819788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56165829A Granted JPS5867073A (ja) 1981-10-19 1981-10-19 太陽電池

Country Status (1)

Country Link
JP (1) JPS5867073A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222278A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置
US4831428A (en) * 1985-04-19 1989-05-16 Eiso Yamaka Infrared ray detection device
US7030413B2 (en) 2000-09-05 2006-04-18 Sanyo Electric Co., Ltd. Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5513939A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5513939A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222278A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置
US4831428A (en) * 1985-04-19 1989-05-16 Eiso Yamaka Infrared ray detection device
US7030413B2 (en) 2000-09-05 2006-04-18 Sanyo Electric Co., Ltd. Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof

Also Published As

Publication number Publication date
JPS6330789B2 (https=) 1988-06-21

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