JPS5861660A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5861660A
JPS5861660A JP56160547A JP16054781A JPS5861660A JP S5861660 A JPS5861660 A JP S5861660A JP 56160547 A JP56160547 A JP 56160547A JP 16054781 A JP16054781 A JP 16054781A JP S5861660 A JPS5861660 A JP S5861660A
Authority
JP
Japan
Prior art keywords
layer
substrate
insulating
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56160547A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02865B2 (enExample
Inventor
Hiroshi Sakuma
啓 佐久間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56160547A priority Critical patent/JPS5861660A/ja
Publication of JPS5861660A publication Critical patent/JPS5861660A/ja
Publication of JPH02865B2 publication Critical patent/JPH02865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56160547A 1981-10-08 1981-10-08 半導体装置の製造方法 Granted JPS5861660A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56160547A JPS5861660A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56160547A JPS5861660A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5861660A true JPS5861660A (ja) 1983-04-12
JPH02865B2 JPH02865B2 (enExample) 1990-01-09

Family

ID=15717340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56160547A Granted JPS5861660A (ja) 1981-10-08 1981-10-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5861660A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245560A (ja) * 1985-04-23 1986-10-31 Agency Of Ind Science & Technol 半導体集積回路用キヤバシタ
JP2011204792A (ja) * 2010-03-24 2011-10-13 Toshiba Corp キャパシタ、集積装置、高周波切替装置及び電子機器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245560A (ja) * 1985-04-23 1986-10-31 Agency Of Ind Science & Technol 半導体集積回路用キヤバシタ
JP2011204792A (ja) * 2010-03-24 2011-10-13 Toshiba Corp キャパシタ、集積装置、高周波切替装置及び電子機器
US8324710B2 (en) 2010-03-24 2012-12-04 Kabushiki Kaisha Toshiba Capacitor, integrated device, radio frequency switching device, and electronic apparatus

Also Published As

Publication number Publication date
JPH02865B2 (enExample) 1990-01-09

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