JPS5860541A - ウエハの加工方法 - Google Patents

ウエハの加工方法

Info

Publication number
JPS5860541A
JPS5860541A JP15981281A JP15981281A JPS5860541A JP S5860541 A JPS5860541 A JP S5860541A JP 15981281 A JP15981281 A JP 15981281A JP 15981281 A JP15981281 A JP 15981281A JP S5860541 A JPS5860541 A JP S5860541A
Authority
JP
Japan
Prior art keywords
wafer
wax
parallel
vacuum chuck
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15981281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0332212B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Torii
鳥井　博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP15981281A priority Critical patent/JPS5860541A/ja
Publication of JPS5860541A publication Critical patent/JPS5860541A/ja
Publication of JPH0332212B2 publication Critical patent/JPH0332212B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP15981281A 1981-10-07 1981-10-07 ウエハの加工方法 Granted JPS5860541A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15981281A JPS5860541A (ja) 1981-10-07 1981-10-07 ウエハの加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15981281A JPS5860541A (ja) 1981-10-07 1981-10-07 ウエハの加工方法

Publications (2)

Publication Number Publication Date
JPS5860541A true JPS5860541A (ja) 1983-04-11
JPH0332212B2 JPH0332212B2 (enrdf_load_stackoverflow) 1991-05-10

Family

ID=15701785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15981281A Granted JPS5860541A (ja) 1981-10-07 1981-10-07 ウエハの加工方法

Country Status (1)

Country Link
JP (1) JPS5860541A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263437A (ja) * 1989-04-03 1990-10-26 Mitsubishi Electric Corp ウエハ剥し装置
JP2011025338A (ja) * 2009-07-23 2011-02-10 Disco Abrasive Syst Ltd 板状物固定方法
JP2012049448A (ja) * 2010-08-30 2012-03-08 Mitsubishi Chemicals Corp 窒化物半導体基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164535A (en) * 1980-05-23 1981-12-17 Toshiba Corp Manufacture of semicondutor element
JPS57147241A (en) * 1981-03-05 1982-09-11 Nec Corp Bonding method for crystal wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164535A (en) * 1980-05-23 1981-12-17 Toshiba Corp Manufacture of semicondutor element
JPS57147241A (en) * 1981-03-05 1982-09-11 Nec Corp Bonding method for crystal wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263437A (ja) * 1989-04-03 1990-10-26 Mitsubishi Electric Corp ウエハ剥し装置
JP2011025338A (ja) * 2009-07-23 2011-02-10 Disco Abrasive Syst Ltd 板状物固定方法
JP2012049448A (ja) * 2010-08-30 2012-03-08 Mitsubishi Chemicals Corp 窒化物半導体基板の製造方法

Also Published As

Publication number Publication date
JPH0332212B2 (enrdf_load_stackoverflow) 1991-05-10

Similar Documents

Publication Publication Date Title
US5893755A (en) Method of polishing a semiconductor wafer
JP2014176954A (ja) 両面研磨装置用キャリアの製造方法およびウエーハの両面研磨方法
US6234873B1 (en) Semiconductor mirror-polished surface wafers and method for manufacturing the same
TW201930015A (zh) 切割刀片的修整方法
JPS5860541A (ja) ウエハの加工方法
TWI354325B (enrdf_load_stackoverflow)
JPH02208931A (ja) 化合物半導体基板の研磨方法
JPS60249568A (ja) 半導体ウエハの研磨方法
TWI224832B (en) Process for machining a wafer-like workpiece
CN110919467B (zh) 晶圆抛光方法
JP2009028889A (ja) 炭化ケイ素単結晶基板の製造方法及び炭化ケイ素単結晶基板製造装置
JPH02239621A (ja) 真空チャツク装置
JP2001198808A (ja) 両面鏡面サファイヤ基板及びその製造方法
JP2010188489A (ja) 接合ウェーハの製造方法
JP2000091282A (ja) 高平坦度ウェーハの製造方法
JPS61114813A (ja) 切断方法
JPH02273923A (ja) 半導体基板の製造方法
JPS5972139A (ja) 薄板材の加工方法
JPH05114593A (ja) 半導体ウエハーの研削方法
JPH06103679B2 (ja) 半導体ウェーハの研磨用ホルダー
JPS644339B2 (enrdf_load_stackoverflow)
JPH02178927A (ja) 板面体の研磨方法
JPS62181869A (ja) 半導体ウエハの研磨方法
CN205085810U (zh) 薄型工件载具
JPH01165128A (ja) ウェーハの製造方法及びその装置