JPS5856433A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5856433A
JPS5856433A JP56155042A JP15504281A JPS5856433A JP S5856433 A JPS5856433 A JP S5856433A JP 56155042 A JP56155042 A JP 56155042A JP 15504281 A JP15504281 A JP 15504281A JP S5856433 A JPS5856433 A JP S5856433A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
oxide film
silicon layer
isolation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56155042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362100B2 (enrdf_load_stackoverflow
Inventor
Tadashi Kirisako
桐迫 正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56155042A priority Critical patent/JPS5856433A/ja
Publication of JPS5856433A publication Critical patent/JPS5856433A/ja
Publication of JPS6362100B2 publication Critical patent/JPS6362100B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56155042A 1981-09-30 1981-09-30 半導体装置の製造方法 Granted JPS5856433A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56155042A JPS5856433A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56155042A JPS5856433A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856433A true JPS5856433A (ja) 1983-04-04
JPS6362100B2 JPS6362100B2 (enrdf_load_stackoverflow) 1988-12-01

Family

ID=15597393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56155042A Granted JPS5856433A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856433A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6362100B2 (enrdf_load_stackoverflow) 1988-12-01

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