JPS5856417A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5856417A
JPS5856417A JP15514881A JP15514881A JPS5856417A JP S5856417 A JPS5856417 A JP S5856417A JP 15514881 A JP15514881 A JP 15514881A JP 15514881 A JP15514881 A JP 15514881A JP S5856417 A JPS5856417 A JP S5856417A
Authority
JP
Japan
Prior art keywords
ion
layer
implanted layer
boron
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15514881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334649B2 (enrdf_load_stackoverflow
Inventor
Kei Kirita
桐田　慶
Katsuo Koike
小池　勝夫
Hirosaku Yamada
山田　啓作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15514881A priority Critical patent/JPS5856417A/ja
Publication of JPS5856417A publication Critical patent/JPS5856417A/ja
Publication of JPH0334649B2 publication Critical patent/JPH0334649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP15514881A 1981-09-30 1981-09-30 半導体装置の製造方法 Granted JPS5856417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15514881A JPS5856417A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15514881A JPS5856417A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5856417A true JPS5856417A (ja) 1983-04-04
JPH0334649B2 JPH0334649B2 (enrdf_load_stackoverflow) 1991-05-23

Family

ID=15599580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15514881A Granted JPS5856417A (ja) 1981-09-30 1981-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5856417A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000694A1 (en) * 1983-07-25 1985-02-14 American Telephone & Telegraph Company Shallow-junction semiconductor devices
JPS63169057A (ja) * 1985-12-27 1988-07-13 ビユル　エス．　アー． 半導体材料へのドーピングによる電気抵抗の形成方法
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
JPH04225520A (ja) * 1990-12-27 1992-08-14 Shimadzu Corp イオン注入により生じたシリコン結晶欠陥の抑制方法
US5298434A (en) * 1992-02-07 1994-03-29 Harris Corporation Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits
JPH07142421A (ja) * 1993-11-22 1995-06-02 Nec Corp 半導体装置のシャロージャンクション形成方法および形成装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4673355B2 (ja) 2007-10-30 2011-04-20 Ｔｍｔマシナリー株式会社 交絡装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000694A1 (en) * 1983-07-25 1985-02-14 American Telephone & Telegraph Company Shallow-junction semiconductor devices
JPS63169057A (ja) * 1985-12-27 1988-07-13 ビユル　エス．　アー． 半導体材料へのドーピングによる電気抵抗の形成方法
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
JPH04225520A (ja) * 1990-12-27 1992-08-14 Shimadzu Corp イオン注入により生じたシリコン結晶欠陥の抑制方法
US5298434A (en) * 1992-02-07 1994-03-29 Harris Corporation Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits
JPH07142421A (ja) * 1993-11-22 1995-06-02 Nec Corp 半導体装置のシャロージャンクション形成方法および形成装置

Also Published As

Publication number Publication date
JPH0334649B2 (enrdf_load_stackoverflow) 1991-05-23

Similar Documents

Publication Publication Date Title
EP0146233B1 (en) Low temperature process for annealing shallow implanted n+/p junctions
KR100204856B1 (ko) 반도체 기판의 표면 영역내에 얕은 접합을 형성하기 위한 방법 및 장치
JPS5821419B2 (ja) 格子欠陥除去方法
JPS60501927A (ja) 浅い接合の半導体デバイス
JPS5856417A (ja) 半導体装置の製造方法
US6518150B1 (en) Method of manufacturing semiconductor device
JP7537356B2 (ja) 半導体エピタキシャルウェーハの製造方法
JPH03201535A (ja) 半導体装置とその製造方法
JPH0526343B2 (enrdf_load_stackoverflow)
KR100587050B1 (ko) 반도체 소자의 제조방법
KR100671594B1 (ko) 반도체 소자의 얕은 접합 트랜지스터 제조 방법
JPH03265131A (ja) 半導体装置の製造方法
JPH04196525A (ja) 半導体装置の製造方法
KR100319873B1 (ko) 고농도이온주입층의저온활성화방법
JP3384439B2 (ja) 半導体装置の製造方法
JPS60175416A (ja) 半導体装置の製造方法
KR960012288A (ko) 반도체 소자 제조용 웨이퍼 및 그 제작방법
TW521351B (en) Fabrication method of semiconductor device with low resistivity/ultra-shallow junction
KR101348400B1 (ko) 반도체 소자의 게이트 산화막 제조방법
KR100434960B1 (ko) 반도체소자의제조방법
JPS60213019A (ja) 半導体装置の製造方法
Heo et al. Ultrashallow arsenic n+/p junction formed by AsH3 plasma doping
JPH0239534A (ja) 半導体装置の製造方法
CN114678267A (zh) 一种向半导体栅极掺杂离子的方法及其应用
KR20010017518A (ko) 모스전계효과트랜지스터 소자의 제조방법