JPS5856414A - プラズマ気相法 - Google Patents
プラズマ気相法Info
- Publication number
- JPS5856414A JPS5856414A JP56155425A JP15542581A JPS5856414A JP S5856414 A JPS5856414 A JP S5856414A JP 56155425 A JP56155425 A JP 56155425A JP 15542581 A JP15542581 A JP 15542581A JP S5856414 A JPS5856414 A JP S5856414A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- reactive gas
- silicon carbide
- tube
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H10P14/24—
-
- H10P14/2923—
-
- H10P14/3208—
-
- H10P14/3408—
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56155425A JPS5856414A (ja) | 1981-09-30 | 1981-09-30 | プラズマ気相法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56155425A JPS5856414A (ja) | 1981-09-30 | 1981-09-30 | プラズマ気相法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856414A true JPS5856414A (ja) | 1983-04-04 |
| JPH0332209B2 JPH0332209B2 (en:Method) | 1991-05-10 |
Family
ID=15605720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56155425A Granted JPS5856414A (ja) | 1981-09-30 | 1981-09-30 | プラズマ気相法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856414A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529652A (ja) * | 1991-07-19 | 1993-02-05 | Tdk Corp | 青色発光素子及びその製造方法 |
| CN102891073A (zh) * | 2012-09-28 | 2013-01-23 | 南京航空航天大学 | 一种低温等离子体辅助铝诱导多晶碳化硅薄膜的制备方法 |
-
1981
- 1981-09-30 JP JP56155425A patent/JPS5856414A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529652A (ja) * | 1991-07-19 | 1993-02-05 | Tdk Corp | 青色発光素子及びその製造方法 |
| CN102891073A (zh) * | 2012-09-28 | 2013-01-23 | 南京航空航天大学 | 一种低温等离子体辅助铝诱导多晶碳化硅薄膜的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0332209B2 (en:Method) | 1991-05-10 |
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