JPS5852851A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5852851A JPS5852851A JP15096781A JP15096781A JPS5852851A JP S5852851 A JPS5852851 A JP S5852851A JP 15096781 A JP15096781 A JP 15096781A JP 15096781 A JP15096781 A JP 15096781A JP S5852851 A JPS5852851 A JP S5852851A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- mask
- conductive wiring
- region
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 26
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 239000011800 void material Substances 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15096781A JPS5852851A (ja) | 1981-09-24 | 1981-09-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15096781A JPS5852851A (ja) | 1981-09-24 | 1981-09-24 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5852851A true JPS5852851A (ja) | 1983-03-29 |
JPS6331100B2 JPS6331100B2 (enrdf_load_html_response) | 1988-06-22 |
Family
ID=15508345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15096781A Granted JPS5852851A (ja) | 1981-09-24 | 1981-09-24 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5852851A (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63201863U (enrdf_load_html_response) * | 1987-06-18 | 1988-12-26 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
-
1981
- 1981-09-24 JP JP15096781A patent/JPS5852851A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63201863U (enrdf_load_html_response) * | 1987-06-18 | 1988-12-26 |
Also Published As
Publication number | Publication date |
---|---|
JPS6331100B2 (enrdf_load_html_response) | 1988-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH06216125A (ja) | 高集積半導体素子のコンタクトホール形成方法 | |
JPS583381B2 (ja) | 支持基板の片側で大地平面の上下に配線を作る方法 | |
JPH027471A (ja) | ポリシリコンショットキーダイオード | |
EP0055608B1 (en) | Semiconductor memory device and method of making it | |
JP2553699B2 (ja) | 半導体装置の製造方法 | |
JPS58202545A (ja) | 半導体装置の製造方法 | |
JPS6015944A (ja) | 半導体装置 | |
JPS5852851A (ja) | 半導体装置の製造方法 | |
JPS61224360A (ja) | 電界効果トランジスタの製造方法 | |
US5101262A (en) | Semiconductor memory device and method of manufacturing it | |
JPH05226655A (ja) | 半導体装置の製造方法 | |
US6566197B2 (en) | Method for fabricating connection structure between segment transistor and memory cell region of flash memory device | |
JPS6230494B2 (enrdf_load_html_response) | ||
JPH06196707A (ja) | 縦型絶縁ゲート型トランジスタの製法 | |
JPS5821861A (ja) | 半導体記憶装置 | |
JPS58170030A (ja) | 半導体装置の製造方法 | |
JPS6047445A (ja) | 半導体装置の製造方法 | |
JPS58119651A (ja) | 半導体装置およびその製造方法 | |
JPH0831599B2 (ja) | 半導体装置 | |
JPS5974623A (ja) | 半導体集積回路の製造方法 | |
JPS58106847A (ja) | 半導体装置の製造方法 | |
JPS60137067A (ja) | 半導体装置の製造方法 | |
JPH02199865A (ja) | 半導体装置の製造方法 | |
JPS60785B2 (ja) | Mos型半導体装置の製造方法 | |
JPS5925266A (ja) | 半導体装置作製方法 |