JPS5851575A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5851575A
JPS5851575A JP56149990A JP14999081A JPS5851575A JP S5851575 A JPS5851575 A JP S5851575A JP 56149990 A JP56149990 A JP 56149990A JP 14999081 A JP14999081 A JP 14999081A JP S5851575 A JPS5851575 A JP S5851575A
Authority
JP
Japan
Prior art keywords
layer
source
gallium arsenide
region
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356711B2 (cs
Inventor
Tomonori Ishikawa
石川　知則
Toshio Hashimoto
橋本　寿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56149990A priority Critical patent/JPS5851575A/ja
Publication of JPS5851575A publication Critical patent/JPS5851575A/ja
Publication of JPS6356711B2 publication Critical patent/JPS6356711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56149990A 1981-09-22 1981-09-22 半導体装置の製造方法 Granted JPS5851575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149990A JPS5851575A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149990A JPS5851575A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5851575A true JPS5851575A (ja) 1983-03-26
JPS6356711B2 JPS6356711B2 (cs) 1988-11-09

Family

ID=15487049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149990A Granted JPS5851575A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5851575A (cs)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239679A (ja) * 1985-04-15 1986-10-24 Takeshi Kobayashi 半導体装置
US5381027A (en) * 1988-01-26 1995-01-10 Hitachi, Ltd. Semiconductor device having a heterojunction and a two dimensional gas as an active layer
EP2953167A1 (en) * 2014-06-05 2015-12-09 Nxp B.V. Semiconductor heterojunction device
CN106796953A (zh) * 2014-10-30 2017-05-31 英特尔公司 源极/漏极至氮化镓晶体管中的2d电子气的低接触电阻再生长
CN109841676A (zh) * 2019-03-21 2019-06-04 华南理工大学 辅助掺杂实现常关型GaN HEMT器件及其制备方法
US10756183B2 (en) 2014-12-18 2020-08-25 Intel Corporation N-channel gallium nitride transistors
US10930500B2 (en) 2014-09-18 2021-02-23 Intel Corporation Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
US11177376B2 (en) 2014-09-25 2021-11-16 Intel Corporation III-N epitaxial device structures on free standing silicon mesas
US11233053B2 (en) 2017-09-29 2022-01-25 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
US12125888B2 (en) 2017-09-29 2024-10-22 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239679A (ja) * 1985-04-15 1986-10-24 Takeshi Kobayashi 半導体装置
US5381027A (en) * 1988-01-26 1995-01-10 Hitachi, Ltd. Semiconductor device having a heterojunction and a two dimensional gas as an active layer
EP2953167A1 (en) * 2014-06-05 2015-12-09 Nxp B.V. Semiconductor heterojunction device
US9391187B2 (en) 2014-06-05 2016-07-12 Nxp B.V. Semiconductor heterojunction device
US10930500B2 (en) 2014-09-18 2021-02-23 Intel Corporation Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
US11177376B2 (en) 2014-09-25 2021-11-16 Intel Corporation III-N epitaxial device structures on free standing silicon mesas
CN106796953A (zh) * 2014-10-30 2017-05-31 英特尔公司 源极/漏极至氮化镓晶体管中的2d电子气的低接触电阻再生长
US10756183B2 (en) 2014-12-18 2020-08-25 Intel Corporation N-channel gallium nitride transistors
US11233053B2 (en) 2017-09-29 2022-01-25 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
US11728346B2 (en) 2017-09-29 2023-08-15 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
US12125888B2 (en) 2017-09-29 2024-10-22 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
CN109841676A (zh) * 2019-03-21 2019-06-04 华南理工大学 辅助掺杂实现常关型GaN HEMT器件及其制备方法

Also Published As

Publication number Publication date
JPS6356711B2 (cs) 1988-11-09

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