JPS6356711B2 - - Google Patents

Info

Publication number
JPS6356711B2
JPS6356711B2 JP56149990A JP14999081A JPS6356711B2 JP S6356711 B2 JPS6356711 B2 JP S6356711B2 JP 56149990 A JP56149990 A JP 56149990A JP 14999081 A JP14999081 A JP 14999081A JP S6356711 B2 JPS6356711 B2 JP S6356711B2
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
source
forming
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56149990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5851575A (ja
Inventor
Tomonori Ishikawa
Toshio Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56149990A priority Critical patent/JPS5851575A/ja
Publication of JPS5851575A publication Critical patent/JPS5851575A/ja
Publication of JPS6356711B2 publication Critical patent/JPS6356711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56149990A 1981-09-22 1981-09-22 半導体装置の製造方法 Granted JPS5851575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149990A JPS5851575A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149990A JPS5851575A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5851575A JPS5851575A (ja) 1983-03-26
JPS6356711B2 true JPS6356711B2 (cs) 1988-11-09

Family

ID=15487049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149990A Granted JPS5851575A (ja) 1981-09-22 1981-09-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5851575A (cs)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0614563B2 (ja) * 1985-04-15 1994-02-23 猛 小林 半導体装置
US5381027A (en) * 1988-01-26 1995-01-10 Hitachi, Ltd. Semiconductor device having a heterojunction and a two dimensional gas as an active layer
EP2953167A1 (en) 2014-06-05 2015-12-09 Nxp B.V. Semiconductor heterojunction device
WO2016043748A1 (en) 2014-09-18 2016-03-24 Intel Corporation Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon cmos-compatible semiconductor devices
US10229991B2 (en) 2014-09-25 2019-03-12 Intel Corporation III-N epitaxial device structures on free standing silicon mesas
WO2016068935A1 (en) * 2014-10-30 2016-05-06 Intel Corporation Source/drain regrowth for low contact resistance to 2d electron gas in gallium nitride transistors
US10056456B2 (en) 2014-12-18 2018-08-21 Intel Corporation N-channel gallium nitride transistors
US12125888B2 (en) 2017-09-29 2024-10-22 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
WO2019066953A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING SAME
CN109841676A (zh) * 2019-03-21 2019-06-04 华南理工大学 辅助掺杂实现常关型GaN HEMT器件及其制备方法

Also Published As

Publication number Publication date
JPS5851575A (ja) 1983-03-26

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