JPS584920Y2 - 酸化亜鉛薄膜の製造装置 - Google Patents
酸化亜鉛薄膜の製造装置Info
- Publication number
- JPS584920Y2 JPS584920Y2 JP1978115320U JP11532078U JPS584920Y2 JP S584920 Y2 JPS584920 Y2 JP S584920Y2 JP 1978115320 U JP1978115320 U JP 1978115320U JP 11532078 U JP11532078 U JP 11532078U JP S584920 Y2 JPS584920 Y2 JP S584920Y2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- zinc
- zinc oxide
- substrate
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1978115320U JPS584920Y2 (ja) | 1978-08-23 | 1978-08-23 | 酸化亜鉛薄膜の製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1978115320U JPS584920Y2 (ja) | 1978-08-23 | 1978-08-23 | 酸化亜鉛薄膜の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533919U JPS5533919U (enrdf_load_stackoverflow) | 1980-03-05 |
JPS584920Y2 true JPS584920Y2 (ja) | 1983-01-27 |
Family
ID=29066846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1978115320U Expired JPS584920Y2 (ja) | 1978-08-23 | 1978-08-23 | 酸化亜鉛薄膜の製造装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS584920Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5989763A (ja) * | 1983-09-28 | 1984-05-24 | Ricoh Co Ltd | 薄膜蒸着装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS549592B2 (enrdf_load_stackoverflow) * | 1972-07-29 | 1979-04-25 | ||
JPS5152041U (enrdf_load_stackoverflow) * | 1974-10-18 | 1976-04-20 | ||
JPS5489983A (en) * | 1977-12-28 | 1979-07-17 | Toshiba Corp | Device and method for vacuum deposition compound |
-
1978
- 1978-08-23 JP JP1978115320U patent/JPS584920Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5533919U (enrdf_load_stackoverflow) | 1980-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3925187A (en) | Apparatus for the formation of coatings on a substratum | |
JP2834797B2 (ja) | 薄膜形成装置 | |
JPH0153351B2 (enrdf_load_stackoverflow) | ||
JPS584920Y2 (ja) | 酸化亜鉛薄膜の製造装置 | |
JP3685670B2 (ja) | Dcスパッタリング装置 | |
JPH03104881A (ja) | 鉄‐窒化鉄薄膜形成方法 | |
JPH0216380B2 (enrdf_load_stackoverflow) | ||
JPS5569257A (en) | Low-temperature sputtering unit | |
JPH062939B2 (ja) | 薄膜生成方法 | |
JPS628409A (ja) | 透明電導性金属酸化物膜の形成方法 | |
JP2892047B2 (ja) | 薄膜形成装置 | |
JP3174313B2 (ja) | 薄膜形成装置 | |
JPS63213664A (ja) | イオンプレ−テイング装置 | |
JPS54100988A (en) | Ion plating device | |
JP2905512B2 (ja) | 薄膜形成装置 | |
JPS63161168A (ja) | イオンビ−ムスパツタによる成膜方法 | |
JP2971541B2 (ja) | 薄膜形成装置 | |
JPS58100672A (ja) | 薄膜形成法及びその装置 | |
JPH0645871B2 (ja) | 反応性イオンプレーティング方法 | |
JPS595732Y2 (ja) | イオンプレ−ティング装置 | |
JPH04221066A (ja) | 薄膜蒸着装置 | |
JPS62280357A (ja) | 電子ビ−ム蒸発イオンプレ−テイングとその装置 | |
JPH03166363A (ja) | Icb蒸着装置 | |
JPH083733A (ja) | 薄膜製造方法および薄膜製造装置 | |
JPH0426758A (ja) | 薄膜形成装置 |