JPS5845736A - プラズマエツチング装置 - Google Patents

プラズマエツチング装置

Info

Publication number
JPS5845736A
JPS5845736A JP57150796A JP15079682A JPS5845736A JP S5845736 A JPS5845736 A JP S5845736A JP 57150796 A JP57150796 A JP 57150796A JP 15079682 A JP15079682 A JP 15079682A JP S5845736 A JPS5845736 A JP S5845736A
Authority
JP
Japan
Prior art keywords
plasma
plasma chamber
chamber
power source
transformer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57150796A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481324B2 (enExample
Inventor
アラン・ア−ル・ラインバ−グ
ジヨ−ジ・エヌ・スタインバ−グ
チヤ−ルス・ビ−・ザロウイン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Publication of JPS5845736A publication Critical patent/JPS5845736A/ja
Publication of JPH0481324B2 publication Critical patent/JPH0481324B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
JP57150796A 1981-09-01 1982-09-01 プラズマエツチング装置 Granted JPS5845736A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/298,416 US4431898A (en) 1981-09-01 1981-09-01 Inductively coupled discharge for plasma etching and resist stripping
US298416 1981-09-01

Publications (2)

Publication Number Publication Date
JPS5845736A true JPS5845736A (ja) 1983-03-17
JPH0481324B2 JPH0481324B2 (enExample) 1992-12-22

Family

ID=23150426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57150796A Granted JPS5845736A (ja) 1981-09-01 1982-09-01 プラズマエツチング装置

Country Status (4)

Country Link
US (1) US4431898A (enExample)
EP (1) EP0073963B1 (enExample)
JP (1) JPS5845736A (enExample)
DE (1) DE3277716D1 (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174321A (ja) * 1986-12-11 1988-07-18 クリストファー　デビッド　ドブソン イオン・エッチング及びケミカル・ベーパー・デポジション装置及び方法
JPH02500150A (ja) * 1987-08-07 1990-01-18 コブライン・ナームローズ・ベンノットシャップ 基材を乾式処理またはエッチングする方法および装置
JP2004506339A (ja) * 2000-08-11 2004-02-26 アプライド　マテリアルズ　インコーポレイテッド 外部から励磁されるトロイダルプラズマ源
WO2005001920A1 (ja) * 2003-06-27 2005-01-06 Tokyo Electron Limited プラズマ発生方法、クリーニング方法および基板処理方法
JP2006523934A (ja) * 2003-04-16 2006-10-19 アプライド サイエンス アンド テクノロジー， インコーポレイテッド トロイダル低電場反応性気体および誘電真空槽を有するプラズマ源
JP2006332055A (ja) * 2005-05-23 2006-12-07 New Power Plasma Co Ltd プラズマ処理チャンバ、プラズマ反応器、大気圧プラズマ処理システム及びプラズマ処理システム
JP2007294414A (ja) * 2006-04-24 2007-11-08 New Power Plasma Co Ltd 多重マグネチックコアが結合された誘導結合プラズマ反応器
WO2014045547A1 (ja) * 2012-09-18 2014-03-27 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
WO2014045565A1 (ja) * 2012-09-18 2014-03-27 パナソニック株式会社 プラズマ処理装置及び方法
JP2014120361A (ja) * 2012-12-18 2014-06-30 Panasonic Corp プラズマ処理装置及び方法
JP2016001611A (ja) * 2013-03-28 2016-01-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
JP2016015322A (ja) * 2015-08-05 2016-01-28 パナソニックＩｐマネジメント株式会社 誘導結合型プラズマ処理装置及び方法
US10115565B2 (en) 2012-03-02 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924846A (ja) * 1982-07-26 1984-02-08 エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド ホトレジストの乾式現像法
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
US4736087A (en) * 1987-01-12 1988-04-05 Olin Corporation Plasma stripper with multiple contact point cathode
DE68924413T2 (de) * 1989-01-25 1996-05-02 Ibm Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung.
GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US4988644A (en) * 1989-05-23 1991-01-29 Texas Instruments Incorporated Method for etching semiconductor materials using a remote plasma generator
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5106827A (en) * 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
DE69128345T2 (de) * 1990-01-04 1998-03-26 Mattson Tech Inc Induktiver plasmareaktor im unteren hochfrequenzbereich
JP2888258B2 (ja) * 1990-11-30 1999-05-10 東京エレクトロン株式会社 基板処理装置および基板処理方法
US5290382A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
WO1994006263A1 (en) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill High pressure magnetically assisted inductively coupled plasma
US5759922A (en) * 1993-08-25 1998-06-02 Micron Technology, Inc. Control of etch profiles during extended overetch
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US5968374A (en) * 1997-03-20 1999-10-19 Lam Research Corporation Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
KR20010032498A (ko) * 1997-11-26 2001-04-25 조셉 제이. 스위니 손상없는 스컵쳐 코팅 증착
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6156154A (en) * 1998-06-24 2000-12-05 Seagate Technology, Inc. Apparatus for etching discs and pallets prior to sputter deposition
EP1212775A1 (en) * 1999-08-06 2002-06-12 Advanced Energy Industries, Inc. Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6494986B1 (en) 2000-08-11 2002-12-17 Applied Materials, Inc. Externally excited multiple torroidal plasma source
US6453842B1 (en) 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate
US6551446B1 (en) 2000-08-11 2003-04-22 Applied Materials Inc. Externally excited torroidal plasma source with a gas distribution plate
US6410449B1 (en) 2000-08-11 2002-06-25 Applied Materials, Inc. Method of processing a workpiece using an externally excited torroidal plasma source
US6468388B1 (en) 2000-08-11 2002-10-22 Applied Materials, Inc. Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
US6348126B1 (en) 2000-08-11 2002-02-19 Applied Materials, Inc. Externally excited torroidal plasma source
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6634313B2 (en) 2001-02-13 2003-10-21 Applied Materials, Inc. High-frequency electrostatically shielded toroidal plasma and radical source
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
US6991739B2 (en) * 2001-10-15 2006-01-31 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
CA2359597C (en) * 2001-10-23 2003-10-21 Roland Kenny Beverage can holder
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
KR100481313B1 (ko) * 2001-11-09 2005-04-07 최대규 유도결합 플라즈마 반응기
US6884717B1 (en) 2002-01-03 2005-04-26 The United States Of America As Represented By The Secretary Of The Air Force Stiffened backside fabrication for microwave radio frequency wafers
KR100493954B1 (ko) * 2002-02-09 2005-06-08 최대규 원격 플라즈마 발생장치
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20030230385A1 (en) * 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
US6819096B2 (en) 2003-01-31 2004-11-16 Advanced Energy Industries, Inc. Power measurement mechanism for a transformer coupled plasma source
US6822396B2 (en) * 2003-01-31 2004-11-23 Advanced Energy Industries, Inc. Transformer ignition circuit for a transformer coupled plasma source
KR100507333B1 (ko) * 2003-02-20 2005-08-08 위순임 대면적 유도 프라즈마 발생장치
DE10308539B3 (de) * 2003-02-27 2004-06-03 Bauer Maschinen Gmbh Fräsvorrichtung zum Fräsen von Schlitzen im Boden
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
JP4460940B2 (ja) * 2003-05-07 2010-05-12 株式会社ニューパワープラズマ 多重放電管ブリッジを備えた誘導プラズマチャンバ
US20040237897A1 (en) * 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US20050194099A1 (en) * 2004-03-03 2005-09-08 Jewett Russell F.Jr. Inductively coupled plasma source using induced eddy currents
US7358192B2 (en) * 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US20050258148A1 (en) * 2004-05-18 2005-11-24 Nordson Corporation Plasma system with isolated radio-frequency powered electrodes
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
EP1865537A1 (en) * 2005-03-30 2007-12-12 Matsushita Electric Industrial Co., Ltd. Impurity introduction apparatus and method of impurity introduction
US20070080141A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. Low-voltage inductively coupled source for plasma processing
US20080118663A1 (en) * 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
US7969096B2 (en) 2006-12-15 2011-06-28 Mks Instruments, Inc. Inductively-coupled plasma source
US8771538B2 (en) * 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US9967965B2 (en) * 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
EP2974558A4 (en) * 2013-03-15 2016-08-10 Plasmability Llc RINGFUL PLASMA PROCESSING DEVICE
US20180000284A1 (en) * 2016-06-29 2018-01-04 Prince Castle LLC Continuous conveyor belt for food heating device
DE102018204585A1 (de) * 2017-03-31 2018-10-04 centrotherm international AG Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung
TWI801058B (zh) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 一種複合式電漿源及其運作方法
US12284747B2 (en) 2023-03-07 2025-04-22 Finesse Technology Co., Ltd. Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014986U (enExample) * 1973-06-06 1975-02-17
JPS5016978U (enExample) * 1973-06-11 1975-02-22

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187152A (en) * 1962-03-19 1965-06-01 Itoya Kuaio Heating conveyor delt
AU432371B2 (en) * 1967-07-13 1973-02-06 Commonwealth Scientific And Industrial Research Organization Plasma sintering
CA871894A (en) * 1968-08-02 1971-05-25 Canadian Titanium Pigments Limited Plasma arc heating apparatus
BE788661A (fr) * 1971-10-05 1973-03-12 Lefe Corp Dispositif d'attaque d'une matiere par un gaz dans un champ electromagnetique
US4123663A (en) * 1975-01-22 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus
US4222838A (en) * 1978-06-13 1980-09-16 General Motors Corporation Method for controlling plasma etching rates
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014986U (enExample) * 1973-06-06 1975-02-17
JPS5016978U (enExample) * 1973-06-11 1975-02-22

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63174321A (ja) * 1986-12-11 1988-07-18 クリストファー　デビッド　ドブソン イオン・エッチング及びケミカル・ベーパー・デポジション装置及び方法
JPH02500150A (ja) * 1987-08-07 1990-01-18 コブライン・ナームローズ・ベンノットシャップ 基材を乾式処理またはエッチングする方法および装置
JP2004506339A (ja) * 2000-08-11 2004-02-26 アプライド　マテリアルズ　インコーポレイテッド 外部から励磁されるトロイダルプラズマ源
JP2011124227A (ja) * 2003-04-16 2011-06-23 Mks Instruments Inc トロイダル低電場反応性気体および誘電真空槽を有するプラズマ源
JP2006523934A (ja) * 2003-04-16 2006-10-19 アプライド サイエンス アンド テクノロジー， インコーポレイテッド トロイダル低電場反応性気体および誘電真空槽を有するプラズマ源
US8574448B2 (en) 2003-06-27 2013-11-05 Tokyo Electron Limited Plasma generation method, cleaning method, and substrate processing method
WO2005001920A1 (ja) * 2003-06-27 2005-01-06 Tokyo Electron Limited プラズマ発生方法、クリーニング方法および基板処理方法
JP2006332055A (ja) * 2005-05-23 2006-12-07 New Power Plasma Co Ltd プラズマ処理チャンバ、プラズマ反応器、大気圧プラズマ処理システム及びプラズマ処理システム
JP2007294414A (ja) * 2006-04-24 2007-11-08 New Power Plasma Co Ltd 多重マグネチックコアが結合された誘導結合プラズマ反応器
US10115565B2 (en) 2012-03-02 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
WO2014045547A1 (ja) * 2012-09-18 2014-03-27 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
WO2014045565A1 (ja) * 2012-09-18 2014-03-27 パナソニック株式会社 プラズマ処理装置及び方法
JP2014060036A (ja) * 2012-09-18 2014-04-03 Panasonic Corp 誘導結合型プラズマ処理装置及び方法
JPWO2014045547A1 (ja) * 2012-09-18 2016-08-18 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US9601330B2 (en) 2012-09-18 2017-03-21 Panasonic Intellectual Property Management Co., Ltd. Plasma processing device, and plasma processing method
JP2014120361A (ja) * 2012-12-18 2014-06-30 Panasonic Corp プラズマ処理装置及び方法
JP2016001611A (ja) * 2013-03-28 2016-01-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
JP2016015322A (ja) * 2015-08-05 2016-01-28 パナソニックＩｐマネジメント株式会社 誘導結合型プラズマ処理装置及び方法

Also Published As

Publication number Publication date
JPH0481324B2 (enExample) 1992-12-22
EP0073963A3 (en) 1984-10-17
DE3277716D1 (en) 1987-12-23
EP0073963B1 (en) 1987-11-19
EP0073963A2 (en) 1983-03-16
US4431898A (en) 1984-02-14

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