JPS5845696A - 半導体メモリ回路 - Google Patents
半導体メモリ回路Info
- Publication number
- JPS5845696A JPS5845696A JP56142743A JP14274381A JPS5845696A JP S5845696 A JPS5845696 A JP S5845696A JP 56142743 A JP56142743 A JP 56142743A JP 14274381 A JP14274381 A JP 14274381A JP S5845696 A JPS5845696 A JP S5845696A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- potential
- memory cell
- semiconductor memory
- memory circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142743A JPS5845696A (ja) | 1981-09-10 | 1981-09-10 | 半導体メモリ回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142743A JPS5845696A (ja) | 1981-09-10 | 1981-09-10 | 半導体メモリ回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5845696A true JPS5845696A (ja) | 1983-03-16 |
| JPS634280B2 JPS634280B2 (env) | 1988-01-28 |
Family
ID=15322537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56142743A Granted JPS5845696A (ja) | 1981-09-10 | 1981-09-10 | 半導体メモリ回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5845696A (env) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646268A (en) * | 1983-10-13 | 1987-02-24 | Nec Corporation | Semiconductor bipolar memory device operating in high speed |
-
1981
- 1981-09-10 JP JP56142743A patent/JPS5845696A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4646268A (en) * | 1983-10-13 | 1987-02-24 | Nec Corporation | Semiconductor bipolar memory device operating in high speed |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS634280B2 (env) | 1988-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4395139A (en) | Temperature detecting device | |
| US4471290A (en) | Substrate bias generating circuit | |
| TWI244545B (en) | Semiconductor device having temperature detecting function, testing method, and refresh control method of semiconductor storage device having temperature detecting function | |
| JP3966016B2 (ja) | クランプ回路 | |
| KR0132053B1 (ko) | 반도체집적회로장치 및 그 조합전자장치 | |
| JPH07122064A (ja) | 半導体装置 | |
| JPH0556600B2 (env) | ||
| US4698531A (en) | Power-on reset circuit | |
| JPH02311723A (ja) | 半導体温度検出回路 | |
| JPS6083291A (ja) | 半導体メモリ | |
| JPH04349297A (ja) | センスアンプ回路 | |
| EP0181819B1 (en) | Memory cell power scavenging apparatus and method | |
| JPH06347337A (ja) | 温度検出回路 | |
| US4170017A (en) | Highly integrated semiconductor structure providing a diode-resistor circuit configuration | |
| JPS634280B2 (env) | ||
| JPH0716156B2 (ja) | ダイナミックに切換え可能な低降下電流源 | |
| JPH06105856B2 (ja) | 定電流源回路 | |
| JPS6366794A (ja) | 変数クランプ型メモリセル | |
| JP2812074B2 (ja) | 半導体装置 | |
| JPH10160768A (ja) | 電圧レベル検出装置 | |
| SU1343443A1 (ru) | Матричный накопитель | |
| JPH03196317A (ja) | 半導体集積回路装置 | |
| JPS58147889A (ja) | 半導体装置 | |
| WO2025139861A1 (zh) | 一种稳压电路及调整方法 | |
| JPH01279495A (ja) | 高速型半導体メモリセル |