JPS634280B2 - - Google Patents
Info
- Publication number
- JPS634280B2 JPS634280B2 JP56142743A JP14274381A JPS634280B2 JP S634280 B2 JPS634280 B2 JP S634280B2 JP 56142743 A JP56142743 A JP 56142743A JP 14274381 A JP14274381 A JP 14274381A JP S634280 B2 JPS634280 B2 JP S634280B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- temperature
- potential
- resistor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142743A JPS5845696A (ja) | 1981-09-10 | 1981-09-10 | 半導体メモリ回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56142743A JPS5845696A (ja) | 1981-09-10 | 1981-09-10 | 半導体メモリ回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5845696A JPS5845696A (ja) | 1983-03-16 |
| JPS634280B2 true JPS634280B2 (env) | 1988-01-28 |
Family
ID=15322537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56142743A Granted JPS5845696A (ja) | 1981-09-10 | 1981-09-10 | 半導体メモリ回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5845696A (env) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6083291A (ja) * | 1983-10-13 | 1985-05-11 | Nec Corp | 半導体メモリ |
-
1981
- 1981-09-10 JP JP56142743A patent/JPS5845696A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5845696A (ja) | 1983-03-16 |
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