JPS584464B2 - サイリスタ - Google Patents
サイリスタInfo
- Publication number
- JPS584464B2 JPS584464B2 JP50007382A JP738275A JPS584464B2 JP S584464 B2 JPS584464 B2 JP S584464B2 JP 50007382 A JP50007382 A JP 50007382A JP 738275 A JP738275 A JP 738275A JP S584464 B2 JPS584464 B2 JP S584464B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- junction
- type
- side base
- space charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH68074A CH567803A5 (US07582779-20090901-C00044.png) | 1974-01-18 | 1974-01-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50104877A JPS50104877A (US07582779-20090901-C00044.png) | 1975-08-19 |
| JPS584464B2 true JPS584464B2 (ja) | 1983-01-26 |
Family
ID=4192655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50007382A Expired JPS584464B2 (ja) | 1974-01-18 | 1975-01-16 | サイリスタ |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62185680U (US07582779-20090901-C00044.png) * | 1986-05-20 | 1987-11-26 |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| CH614811A5 (en) * | 1977-04-15 | 1979-12-14 | Bbc Brown Boveri & Cie | Thyristor |
| CH594988A5 (US07582779-20090901-C00044.png) * | 1976-06-02 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
| IT1087185B (it) * | 1976-10-18 | 1985-05-31 | Gen Electric | Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dt |
| CH634442A5 (de) * | 1978-11-15 | 1983-01-31 | Bbc Brown Boveri & Cie | Lichtzuendbarer thyristor. |
| DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
| US4611222A (en) * | 1979-10-12 | 1986-09-09 | Westinghouse Electric Corp. | Solid-state switch |
| DE3226613A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf |
| DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
| JPS5989463A (ja) * | 1982-11-15 | 1984-05-23 | Toshiba Corp | サイリスタ |
| DE3465222D1 (en) * | 1983-05-26 | 1987-09-10 | Gen Electric | Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone |
| EP0230278A3 (de) * | 1986-01-24 | 1989-09-06 | Siemens Aktiengesellschaft | Thyristor mit integrierter Stromversorgung für eine zugeordnete Schaltungseinheit und Verfahren zu seiner Herstellung |
| JPS63260078A (ja) * | 1987-04-17 | 1988-10-27 | Hitachi Ltd | 過電圧自己保護型サイリスタ |
| JPH0539638Y2 (US07582779-20090901-C00044.png) * | 1987-08-20 | 1993-10-07 | ||
| EP0446439B1 (de) * | 1990-03-12 | 1996-07-24 | Siemens Aktiengesellschaft | Thyristor mit reflexionsarmer Lichtzündstruktur |
| US6770911B2 (en) * | 2001-09-12 | 2004-08-03 | Cree, Inc. | Large area silicon carbide devices |
| US8224637B1 (en) * | 2007-04-02 | 2012-07-17 | Xilinx, Inc. | Method and apparatus for modeling transistors in an integrated circuit design |
| US9441307B2 (en) | 2013-12-06 | 2016-09-13 | Saudi Arabian Oil Company | Cathodic protection automated current and potential measuring device for anodes protecting vessel internals |
| CN108615785B (zh) * | 2018-05-03 | 2019-09-27 | 电子科技大学 | 一种具有深n+空穴电流阻挡层的光控晶闸管 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3697833A (en) * | 1970-02-20 | 1972-10-10 | Mitsubishi Electric Corp | Light activated thyristor |
| JPS4817634U (US07582779-20090901-C00044.png) * | 1971-07-06 | 1973-02-28 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3210622A (en) * | 1959-09-11 | 1965-10-05 | Philips Corp | Photo-transistor |
| GB1091656A (en) * | 1963-05-13 | 1967-11-22 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| SE344386B (US07582779-20090901-C00044.png) * | 1968-04-17 | 1972-04-10 | Hitachi Ltd | |
| US3822409A (en) * | 1971-06-01 | 1974-07-02 | Matsushita Electric Works Ltd | Photosensitive solid oscillator |
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
-
1974
- 1974-01-18 CH CH68074A patent/CH567803A5/xx not_active IP Right Cessation
- 1974-02-20 DE DE19742408079 patent/DE2408079A1/de active Granted
- 1974-12-05 US US05/530,020 patent/US3987476A/en not_active Expired - Lifetime
-
1975
- 1975-01-15 SE SE7500420A patent/SE405660B/xx not_active IP Right Cessation
- 1975-01-16 JP JP50007382A patent/JPS584464B2/ja not_active Expired
- 1975-01-16 CA CA218,154A patent/CA1021446A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3697833A (en) * | 1970-02-20 | 1972-10-10 | Mitsubishi Electric Corp | Light activated thyristor |
| JPS4817634U (US07582779-20090901-C00044.png) * | 1971-07-06 | 1973-02-28 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62185680U (US07582779-20090901-C00044.png) * | 1986-05-20 | 1987-11-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| CH567803A5 (US07582779-20090901-C00044.png) | 1975-10-15 |
| JPS50104877A (US07582779-20090901-C00044.png) | 1975-08-19 |
| CA1021446A (en) | 1977-11-22 |
| DE2408079A1 (de) | 1975-07-24 |
| SE405660B (sv) | 1978-12-18 |
| US3987476A (en) | 1976-10-19 |
| SE7500420L (US07582779-20090901-C00044.png) | 1975-07-21 |
| DE2408079C2 (US07582779-20090901-C00044.png) | 1987-04-23 |
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