JPS5842251A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5842251A
JPS5842251A JP14077381A JP14077381A JPS5842251A JP S5842251 A JPS5842251 A JP S5842251A JP 14077381 A JP14077381 A JP 14077381A JP 14077381 A JP14077381 A JP 14077381A JP S5842251 A JPS5842251 A JP S5842251A
Authority
JP
Japan
Prior art keywords
film
oxidation
field
groove
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14077381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6355780B2 (xx
Inventor
Hiroshi Iwai
洋 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14077381A priority Critical patent/JPS5842251A/ja
Publication of JPS5842251A publication Critical patent/JPS5842251A/ja
Publication of JPS6355780B2 publication Critical patent/JPS6355780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP14077381A 1981-09-07 1981-09-07 半導体装置の製造方法 Granted JPS5842251A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14077381A JPS5842251A (ja) 1981-09-07 1981-09-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14077381A JPS5842251A (ja) 1981-09-07 1981-09-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5842251A true JPS5842251A (ja) 1983-03-11
JPS6355780B2 JPS6355780B2 (xx) 1988-11-04

Family

ID=15276411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14077381A Granted JPS5842251A (ja) 1981-09-07 1981-09-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5842251A (xx)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939951A (en) * 1987-07-14 1990-07-10 Nihon Plast Co., Ltd. Impact absorbing structure for use in steering wheels and the like
US5899727A (en) * 1996-05-02 1999-05-04 Advanced Micro Devices, Inc. Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization
US5904539A (en) * 1996-03-21 1999-05-18 Advanced Micro Devices, Inc. Semiconductor trench isolation process resulting in a silicon mesa having enhanced mechanical and electrical properties
US5926713A (en) * 1996-04-17 1999-07-20 Advanced Micro Devices, Inc. Method for achieving global planarization by forming minimum mesas in large field areas
US5981357A (en) * 1996-04-10 1999-11-09 Advanced Micro Devices, Inc. Semiconductor trench isolation with improved planarization methodology
EP1182699A2 (de) * 2000-08-22 2002-02-27 Infineon Technologies AG Verfahren zur Bildung eines dicken dielektrischen Gebietes in einem Halbleitersubstrat
WO2001084602A3 (en) * 2000-05-03 2002-04-04 Maxim Integrated Products Method of forming a shallow and deep trench isolation (sdti) suitable for silicon on insulator (soi) substrates
JP2006319296A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の素子分離膜およびその形成方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10960894B2 (en) * 2018-12-13 2021-03-30 Waymo Llc Automated performance checks for autonomous vehicles
JP7165093B2 (ja) 2019-03-29 2022-11-02 本田技研工業株式会社 車両制御システム

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939951A (en) * 1987-07-14 1990-07-10 Nihon Plast Co., Ltd. Impact absorbing structure for use in steering wheels and the like
US5904539A (en) * 1996-03-21 1999-05-18 Advanced Micro Devices, Inc. Semiconductor trench isolation process resulting in a silicon mesa having enhanced mechanical and electrical properties
US5981357A (en) * 1996-04-10 1999-11-09 Advanced Micro Devices, Inc. Semiconductor trench isolation with improved planarization methodology
US5926713A (en) * 1996-04-17 1999-07-20 Advanced Micro Devices, Inc. Method for achieving global planarization by forming minimum mesas in large field areas
US5899727A (en) * 1996-05-02 1999-05-04 Advanced Micro Devices, Inc. Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization
US6353253B2 (en) 1996-05-02 2002-03-05 Advanced Micro Devices, Inc. Semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization
WO2001084602A3 (en) * 2000-05-03 2002-04-04 Maxim Integrated Products Method of forming a shallow and deep trench isolation (sdti) suitable for silicon on insulator (soi) substrates
EP1182699A2 (de) * 2000-08-22 2002-02-27 Infineon Technologies AG Verfahren zur Bildung eines dicken dielektrischen Gebietes in einem Halbleitersubstrat
EP1182699A3 (de) * 2000-08-22 2007-01-31 Infineon Technologies AG Verfahren zur Bildung eines dicken dielektrischen Gebietes in einem Halbleitersubstrat
JP2006319296A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の素子分離膜およびその形成方法

Also Published As

Publication number Publication date
JPS6355780B2 (xx) 1988-11-04

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