JPS5840855A - 半導体記憶素子 - Google Patents

半導体記憶素子

Info

Publication number
JPS5840855A
JPS5840855A JP56138568A JP13856881A JPS5840855A JP S5840855 A JPS5840855 A JP S5840855A JP 56138568 A JP56138568 A JP 56138568A JP 13856881 A JP13856881 A JP 13856881A JP S5840855 A JPS5840855 A JP S5840855A
Authority
JP
Japan
Prior art keywords
semiconductor layer
wide
layer
narrow
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56138568A
Other languages
English (en)
Japanese (ja)
Other versions
JPH032350B2 (enrdf_load_stackoverflow
Inventor
Tadashi Fukuzawa
董 福沢
Juichi Shimada
嶋田　寿一
Yoshifumi Katayama
片山　良史
Yoshimasa Murayama
村山　良昌
Eizaburo Yamada
山田　栄三郎
Michiharu Nakamura
中村　道治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56138568A priority Critical patent/JPS5840855A/ja
Publication of JPS5840855A publication Critical patent/JPS5840855A/ja
Publication of JPH032350B2 publication Critical patent/JPH032350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56138568A 1981-09-04 1981-09-04 半導体記憶素子 Granted JPS5840855A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138568A JPS5840855A (ja) 1981-09-04 1981-09-04 半導体記憶素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138568A JPS5840855A (ja) 1981-09-04 1981-09-04 半導体記憶素子

Publications (2)

Publication Number Publication Date
JPS5840855A true JPS5840855A (ja) 1983-03-09
JPH032350B2 JPH032350B2 (enrdf_load_stackoverflow) 1991-01-14

Family

ID=15225173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138568A Granted JPS5840855A (ja) 1981-09-04 1981-09-04 半導体記憶素子

Country Status (1)

Country Link
JP (1) JPS5840855A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235476A (ja) * 1984-05-09 1985-11-22 Nec Corp 半導体装置
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
JPS61102767A (ja) * 1984-10-26 1986-05-21 Agency Of Ind Science & Technol 半導体記憶装置の駆動方法
JPS61131565A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 電界効果型半導体装置
JPH04206839A (ja) * 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010512012A (ja) * 2006-12-08 2010-04-15 テヒーニィシエ ウニヴァジテート ベルリン メモリーセル、及びデータ記録方法
JP2011519483A (ja) * 2008-04-30 2011-07-07 インダストリー−ユニバーシティー コオペレーション ファウンデーション ハンヤン ユニバーシティー キャパシタレスメモリ素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235476A (ja) * 1984-05-09 1985-11-22 Nec Corp 半導体装置
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
JPS61102767A (ja) * 1984-10-26 1986-05-21 Agency Of Ind Science & Technol 半導体記憶装置の駆動方法
JPS61131565A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 電界効果型半導体装置
JPH04206839A (ja) * 1990-11-30 1992-07-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010512012A (ja) * 2006-12-08 2010-04-15 テヒーニィシエ ウニヴァジテート ベルリン メモリーセル、及びデータ記録方法
JP2011519483A (ja) * 2008-04-30 2011-07-07 インダストリー−ユニバーシティー コオペレーション ファウンデーション ハンヤン ユニバーシティー キャパシタレスメモリ素子

Also Published As

Publication number Publication date
JPH032350B2 (enrdf_load_stackoverflow) 1991-01-14

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