JPS5839086A - 半導体レ−ザ装置 - Google Patents
半導体レ−ザ装置Info
- Publication number
- JPS5839086A JPS5839086A JP13733081A JP13733081A JPS5839086A JP S5839086 A JPS5839086 A JP S5839086A JP 13733081 A JP13733081 A JP 13733081A JP 13733081 A JP13733081 A JP 13733081A JP S5839086 A JPS5839086 A JP S5839086A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- type
- striped
- semiconductor layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims 1
- 201000009310 astigmatism Diseases 0.000 abstract description 13
- 230000010355 oscillation Effects 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 8
- 230000007704 transition Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13733081A JPS5839086A (ja) | 1981-08-31 | 1981-08-31 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13733081A JPS5839086A (ja) | 1981-08-31 | 1981-08-31 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5839086A true JPS5839086A (ja) | 1983-03-07 |
| JPS6358389B2 JPS6358389B2 (enrdf_load_stackoverflow) | 1988-11-15 |
Family
ID=15196138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13733081A Granted JPS5839086A (ja) | 1981-08-31 | 1981-08-31 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839086A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603177A (ja) * | 1983-06-21 | 1985-01-09 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS60201687A (ja) * | 1984-03-27 | 1985-10-12 | Sony Corp | 半導体レ−ザ− |
| JPS63194384A (ja) * | 1987-02-09 | 1988-08-11 | Sanyo Electric Co Ltd | 半導体レ−ザ装置 |
| JPH06156141A (ja) * | 1992-11-20 | 1994-06-03 | Atex Co Ltd | 三方向ダンプの切替装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153686A (en) * | 1976-06-16 | 1977-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device |
-
1981
- 1981-08-31 JP JP13733081A patent/JPS5839086A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153686A (en) * | 1976-06-16 | 1977-12-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603177A (ja) * | 1983-06-21 | 1985-01-09 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS60201687A (ja) * | 1984-03-27 | 1985-10-12 | Sony Corp | 半導体レ−ザ− |
| JPS63194384A (ja) * | 1987-02-09 | 1988-08-11 | Sanyo Electric Co Ltd | 半導体レ−ザ装置 |
| JPH06156141A (ja) * | 1992-11-20 | 1994-06-03 | Atex Co Ltd | 三方向ダンプの切替装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6358389B2 (enrdf_load_stackoverflow) | 1988-11-15 |
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