JPS6358389B2 - - Google Patents

Info

Publication number
JPS6358389B2
JPS6358389B2 JP56137330A JP13733081A JPS6358389B2 JP S6358389 B2 JPS6358389 B2 JP S6358389B2 JP 56137330 A JP56137330 A JP 56137330A JP 13733081 A JP13733081 A JP 13733081A JP S6358389 B2 JPS6358389 B2 JP S6358389B2
Authority
JP
Japan
Prior art keywords
type
refractive index
semiconductor layer
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56137330A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5839086A (ja
Inventor
Yutaka Mihashi
Shoichi Kakimoto
Toshio Sogo
Saburo Takamya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13733081A priority Critical patent/JPS5839086A/ja
Publication of JPS5839086A publication Critical patent/JPS5839086A/ja
Publication of JPS6358389B2 publication Critical patent/JPS6358389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Semiconductor Lasers (AREA)
JP13733081A 1981-08-31 1981-08-31 半導体レ−ザ装置 Granted JPS5839086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13733081A JPS5839086A (ja) 1981-08-31 1981-08-31 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13733081A JPS5839086A (ja) 1981-08-31 1981-08-31 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5839086A JPS5839086A (ja) 1983-03-07
JPS6358389B2 true JPS6358389B2 (enrdf_load_stackoverflow) 1988-11-15

Family

ID=15196138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13733081A Granted JPS5839086A (ja) 1981-08-31 1981-08-31 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5839086A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603177A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60201687A (ja) * 1984-03-27 1985-10-12 Sony Corp 半導体レ−ザ−
JPS63194384A (ja) * 1987-02-09 1988-08-11 Sanyo Electric Co Ltd 半導体レ−ザ装置
JP2616368B2 (ja) * 1992-11-20 1997-06-04 株式会社アテックス 三方向ダンプの切替装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153686A (en) * 1976-06-16 1977-12-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device

Also Published As

Publication number Publication date
JPS5839086A (ja) 1983-03-07

Similar Documents

Publication Publication Date Title
US5751756A (en) Semiconductor laser device for use as a light source of an optical disk or the like
JPS6358389B2 (enrdf_load_stackoverflow)
JPS6372173A (ja) 半導体レ−ザ装置
JP2723888B2 (ja) 半導体レーザ素子
US4890292A (en) Semiconductor laser device
JPH05160503A (ja) 半導体レーザ装置
JPH0671121B2 (ja) 半導体レーザ装置
US5008892A (en) Semiconductor laser diodes
JPH0587997B2 (enrdf_load_stackoverflow)
JPS6174384A (ja) 半導体レ−ザ−
JPS5957487A (ja) 半導体レ−ザ装置
JPH0821753B2 (ja) 半導体レ−ザ装置
JP2912775B2 (ja) 半導体レーザ装置
JPS63164290A (ja) 半導体レ−ザ装置
JP2001119098A (ja) 半導体レーザおよびその製造方法
JP2988552B2 (ja) 半導体レーザ装置及びその製造方法
JPH03196591A (ja) 半導体レーザ
JPH0231481A (ja) 埋込み型半導体レーザの製造方法
JPS6239084A (ja) 半導体レ−ザ装置及びその製造方法
JPS6236888A (ja) 半導体レ−ザ素子
JPH01173773A (ja) 半導体レーザ素子
JPH02275689A (ja) 半導体レーザ
JPS63110784A (ja) 半導体レ−ザ
JPH01136392A (ja) 半導体レーザ装置
JPS58207691A (ja) 半導体レ−ザ素子