JPS583376B2 - ハンドウタイソシノセイゾウホウホウ - Google Patents

ハンドウタイソシノセイゾウホウホウ

Info

Publication number
JPS583376B2
JPS583376B2 JP49103915A JP10391574A JPS583376B2 JP S583376 B2 JPS583376 B2 JP S583376B2 JP 49103915 A JP49103915 A JP 49103915A JP 10391574 A JP10391574 A JP 10391574A JP S583376 B2 JPS583376 B2 JP S583376B2
Authority
JP
Japan
Prior art keywords
wiring
substrate
film
soshinoseizouhou
hand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49103915A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5131187A (enrdf_load_stackoverflow
Inventor
植木和義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP49103915A priority Critical patent/JPS583376B2/ja
Publication of JPS5131187A publication Critical patent/JPS5131187A/ja
Publication of JPS583376B2 publication Critical patent/JPS583376B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP49103915A 1974-09-11 1974-09-11 ハンドウタイソシノセイゾウホウホウ Expired JPS583376B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49103915A JPS583376B2 (ja) 1974-09-11 1974-09-11 ハンドウタイソシノセイゾウホウホウ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49103915A JPS583376B2 (ja) 1974-09-11 1974-09-11 ハンドウタイソシノセイゾウホウホウ

Publications (2)

Publication Number Publication Date
JPS5131187A JPS5131187A (enrdf_load_stackoverflow) 1976-03-17
JPS583376B2 true JPS583376B2 (ja) 1983-01-21

Family

ID=14366708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49103915A Expired JPS583376B2 (ja) 1974-09-11 1974-09-11 ハンドウタイソシノセイゾウホウホウ

Country Status (1)

Country Link
JP (1) JPS583376B2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2535734B2 (ja) * 1985-07-03 1996-09-18 工業技術院長 導電薄膜の堆積方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528114B2 (enrdf_load_stackoverflow) * 1972-04-25 1977-03-07

Also Published As

Publication number Publication date
JPS5131187A (enrdf_load_stackoverflow) 1976-03-17

Similar Documents

Publication Publication Date Title
US4849071A (en) Method of forming a sealed diaphragm on a substrate
JP4037366B2 (ja) 薄膜技術における位相が最適化された共振器用電極の製造方法
JPH07302836A (ja) 半導体装置のフィールド酸化膜形成方法
JP4096787B2 (ja) 弾性表面波素子の製造方法
JPH04229618A (ja) 集積回路デバイスの接点及びその形成方法
JPS583376B2 (ja) ハンドウタイソシノセイゾウホウホウ
JPH11145279A (ja) 窒化シリコン保護膜のピンホール除去方法
KR100220933B1 (ko) 반도체 소자의 금속배선 형성방법
JPH0214784B2 (enrdf_load_stackoverflow)
JP2952575B2 (ja) ダイヤモンド微細加工方法
US3293092A (en) Semiconductor device fabrication
JPH0485829A (ja) 半導体装置及びその製造方法
JPS5810855B2 (ja) タソウハイセンコウゾウノセイホウ
JPS62149125A (ja) 半導体装置の製造方法
JPH03263833A (ja) テーパエツチング方法
KR960008523B1 (ko) 반도체 소자의 금속 배선 방법
JPS6059742B2 (ja) 半導体装置およびその製造方法
JPS594014A (ja) 半導体装置の製造方法
JP2924085B2 (ja) 電極ラインの製造方法
JPH01238043A (ja) 配線形成方法
JPH01223751A (ja) 半導体装置の製造方法
JPH0476208B2 (enrdf_load_stackoverflow)
JPS639952A (ja) 半導体装置の製造方法
JPS5952542B2 (ja) 半導体装置の製造方法
JPS6297331A (ja) 半導体装置の製造方法