JPS5832434A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5832434A
JPS5832434A JP13052181A JP13052181A JPS5832434A JP S5832434 A JPS5832434 A JP S5832434A JP 13052181 A JP13052181 A JP 13052181A JP 13052181 A JP13052181 A JP 13052181A JP S5832434 A JPS5832434 A JP S5832434A
Authority
JP
Japan
Prior art keywords
film
insulating film
semiconductor device
silicon oxide
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13052181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320383B2 (enrdf_load_stackoverflow
Inventor
Shigeru Morita
茂 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13052181A priority Critical patent/JPS5832434A/ja
Publication of JPS5832434A publication Critical patent/JPS5832434A/ja
Publication of JPS6320383B2 publication Critical patent/JPS6320383B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP13052181A 1981-08-20 1981-08-20 半導体装置の製造方法 Granted JPS5832434A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13052181A JPS5832434A (ja) 1981-08-20 1981-08-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13052181A JPS5832434A (ja) 1981-08-20 1981-08-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5832434A true JPS5832434A (ja) 1983-02-25
JPS6320383B2 JPS6320383B2 (enrdf_load_stackoverflow) 1988-04-27

Family

ID=15036281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13052181A Granted JPS5832434A (ja) 1981-08-20 1981-08-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5832434A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111470A (ja) * 1983-11-22 1985-06-17 Fujitsu Ltd 半導体装置の製造方法
JPS62274641A (ja) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp 半導体装置の製造方法
US5420077A (en) * 1990-06-29 1995-05-30 Sharp Kabushiki Kaisha Method for forming a wiring layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221785A (en) * 1975-08-13 1977-02-18 Toshiba Corp Unit and production system for semiconductor
JPS52102691A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Formation of wiring on insulating layer having steps
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221785A (en) * 1975-08-13 1977-02-18 Toshiba Corp Unit and production system for semiconductor
JPS52102691A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Formation of wiring on insulating layer having steps
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60111470A (ja) * 1983-11-22 1985-06-17 Fujitsu Ltd 半導体装置の製造方法
JPS62274641A (ja) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp 半導体装置の製造方法
US5420077A (en) * 1990-06-29 1995-05-30 Sharp Kabushiki Kaisha Method for forming a wiring layer

Also Published As

Publication number Publication date
JPS6320383B2 (enrdf_load_stackoverflow) 1988-04-27

Similar Documents

Publication Publication Date Title
JPS5856268B2 (ja) 半導体装置の製造方法
JPS5832434A (ja) 半導体装置の製造方法
US4030952A (en) Method of MOS circuit fabrication
JPH0210730A (ja) 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造
JPS5842254A (ja) 半導体装置の製造方法
JP2712401B2 (ja) 半導体装置の製造方法
JPS6214095B2 (enrdf_load_stackoverflow)
JPS6020562A (ja) Ｍｏｓ型半導体装置及びその製造方法
JPS61131482A (ja) 不揮発性半導体記憶装置の製造方法
JPH0318034A (ja) 半導体装置の製造方法
JPS583252A (ja) 半導体集積回路装置
JPS6047437A (ja) 半導体装置およびその製造方法
JPS6118348B2 (enrdf_load_stackoverflow)
JP2584887B2 (ja) 半導体装置の製造方法
JPS5856261B2 (ja) 半導体集積回路の製造方法
JPS60234326A (ja) 半導体装置の製造方法
JPS583230A (ja) 半導体装置の製造方法
JPS59105368A (ja) Ｍｏｓ型半導体装置の製造方法
JPS6279625A (ja) 半導体装置の製造方法
JPS60785B2 (ja) Ｍｏｓ型半導体装置の製造方法
JPH04208570A (ja) 半導体装置の製造方法
JPS6041243A (ja) 半導体装置の製造方法
JPS58147132A (ja) 半導体装置の製造方法
JPH0320908B2 (enrdf_load_stackoverflow)
JPH0117256B2 (enrdf_load_stackoverflow)