JPS5832434A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5832434A JPS5832434A JP13052181A JP13052181A JPS5832434A JP S5832434 A JPS5832434 A JP S5832434A JP 13052181 A JP13052181 A JP 13052181A JP 13052181 A JP13052181 A JP 13052181A JP S5832434 A JPS5832434 A JP S5832434A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor device
- silicon oxide
- thickness
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13052181A JPS5832434A (ja) | 1981-08-20 | 1981-08-20 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13052181A JPS5832434A (ja) | 1981-08-20 | 1981-08-20 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5832434A true JPS5832434A (ja) | 1983-02-25 |
| JPS6320383B2 JPS6320383B2 (enrdf_load_stackoverflow) | 1988-04-27 |
Family
ID=15036281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13052181A Granted JPS5832434A (ja) | 1981-08-20 | 1981-08-20 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5832434A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111470A (ja) * | 1983-11-22 | 1985-06-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62274641A (ja) * | 1986-05-22 | 1987-11-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5420077A (en) * | 1990-06-29 | 1995-05-30 | Sharp Kabushiki Kaisha | Method for forming a wiring layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221785A (en) * | 1975-08-13 | 1977-02-18 | Toshiba Corp | Unit and production system for semiconductor |
| JPS52102691A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Formation of wiring on insulating layer having steps |
| JPS5324277A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Semiconductor devic e and its production |
-
1981
- 1981-08-20 JP JP13052181A patent/JPS5832434A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221785A (en) * | 1975-08-13 | 1977-02-18 | Toshiba Corp | Unit and production system for semiconductor |
| JPS52102691A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Formation of wiring on insulating layer having steps |
| JPS5324277A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Semiconductor devic e and its production |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111470A (ja) * | 1983-11-22 | 1985-06-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62274641A (ja) * | 1986-05-22 | 1987-11-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5420077A (en) * | 1990-06-29 | 1995-05-30 | Sharp Kabushiki Kaisha | Method for forming a wiring layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320383B2 (enrdf_load_stackoverflow) | 1988-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS615580A (ja) | 半導体装置の製造方法 | |
| JPS60138918A (ja) | 半導体装置の製造方法 | |
| JPS5832434A (ja) | 半導体装置の製造方法 | |
| US4030952A (en) | Method of MOS circuit fabrication | |
| JPH0210730A (ja) | 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造 | |
| JP2712401B2 (ja) | 半導体装置の製造方法 | |
| JPS5842254A (ja) | 半導体装置の製造方法 | |
| JPS6214095B2 (enrdf_load_stackoverflow) | ||
| JPS59121978A (ja) | 半導体装置の製造方法 | |
| JPS6142169A (ja) | 半導体装置の製造方法 | |
| JPS583252A (ja) | 半導体集積回路装置 | |
| JPS6041243A (ja) | 半導体装置の製造方法 | |
| JPS61131482A (ja) | 不揮発性半導体記憶装置の製造方法 | |
| JPS5856261B2 (ja) | 半導体集積回路の製造方法 | |
| JPS60785B2 (ja) | Mos型半導体装置の製造方法 | |
| JPS59105368A (ja) | Mos型半導体装置の製造方法 | |
| JPS6118348B2 (enrdf_load_stackoverflow) | ||
| JPS583230A (ja) | 半導体装置の製造方法 | |
| JPS58191467A (ja) | 半導体装置の製造方法 | |
| JPS59108317A (ja) | 電極配線形成法 | |
| JPS6118350B2 (enrdf_load_stackoverflow) | ||
| JPS58147132A (ja) | 半導体装置の製造方法 | |
| JPH02139931A (ja) | 半導体装置の製造方法 | |
| JPS6399534A (ja) | 半導体基板のトレンチ溝の加工方法 | |
| JPH02262321A (ja) | 半導体装置の製造方法 |