JPS5830178A - トンネル形ジヨセフソン接合素子の製造方法 - Google Patents

トンネル形ジヨセフソン接合素子の製造方法

Info

Publication number
JPS5830178A
JPS5830178A JP56128439A JP12843981A JPS5830178A JP S5830178 A JPS5830178 A JP S5830178A JP 56128439 A JP56128439 A JP 56128439A JP 12843981 A JP12843981 A JP 12843981A JP S5830178 A JPS5830178 A JP S5830178A
Authority
JP
Japan
Prior art keywords
tunnel
gas
barrier layer
thin film
base electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56128439A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257274B2 (cg-RX-API-DMAC7.html
Inventor
Yujiro Kato
加藤　雄二郎
Osamu Michigami
修 道上
Keiichi Tanabe
圭一 田辺
Hisataka Takenaka
久貴 竹中
Shizuka Yoshii
吉井　静
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56128439A priority Critical patent/JPS5830178A/ja
Priority to CA000405292A priority patent/CA1168762A/en
Priority to US06/390,116 priority patent/US4412902A/en
Priority to FR8211126A priority patent/FR2508237B1/fr
Priority to NL8202511A priority patent/NL190858C/xx
Publication of JPS5830178A publication Critical patent/JPS5830178A/ja
Publication of JPS6257274B2 publication Critical patent/JPS6257274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP56128439A 1981-06-22 1981-08-17 トンネル形ジヨセフソン接合素子の製造方法 Granted JPS5830178A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56128439A JPS5830178A (ja) 1981-08-17 1981-08-17 トンネル形ジヨセフソン接合素子の製造方法
CA000405292A CA1168762A (en) 1981-06-22 1982-06-16 Method of fabrication for josephson tunnel junction
US06/390,116 US4412902A (en) 1981-06-22 1982-06-18 Method of fabrication of Josephson tunnel junction
FR8211126A FR2508237B1 (fr) 1981-06-22 1982-06-22 Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephson
NL8202511A NL190858C (nl) 1981-06-22 1982-06-22 Werkwijze voor het vervaardigen van een Josephson-tunnelovergang.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56128439A JPS5830178A (ja) 1981-08-17 1981-08-17 トンネル形ジヨセフソン接合素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5830178A true JPS5830178A (ja) 1983-02-22
JPS6257274B2 JPS6257274B2 (cg-RX-API-DMAC7.html) 1987-11-30

Family

ID=14984757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56128439A Granted JPS5830178A (ja) 1981-06-22 1981-08-17 トンネル形ジヨセフソン接合素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5830178A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPS6257274B2 (cg-RX-API-DMAC7.html) 1987-11-30

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