JPS5829851U - semiconductor element - Google Patents
semiconductor elementInfo
- Publication number
- JPS5829851U JPS5829851U JP12423581U JP12423581U JPS5829851U JP S5829851 U JPS5829851 U JP S5829851U JP 12423581 U JP12423581 U JP 12423581U JP 12423581 U JP12423581 U JP 12423581U JP S5829851 U JPS5829851 U JP S5829851U
- Authority
- JP
- Japan
- Prior art keywords
- titanium
- semiconductor element
- layer
- thickness
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Landscapes
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はバックメタライズに金電極構造を用いた従来の
半導体素子の要部のみを示す断面図、第２図はこの考案
の一実施例の要部のみを示す断面図である。
図において、１はシリコンチップ（シリコン基、体）、
２はチタン層、３は金電極、４は窒化チタン層である。
なお、図中同一符号は同一または相当部分を示す。FIG. 1 is a sectional view showing only the essential parts of a conventional semiconductor element using a gold electrode structure for back metallization, and FIG. 2 is a sectional view showing only the essential parts of an embodiment of this invention. In the figure, 1 is a silicon chip (silicon base, body),
2 is a titanium layer, 3 is a gold electrode, and 4 is a titanium nitride layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (2)
層上に窒化チタン層を介して金電極を形成してなること
を特徴とする半導体素子。(1) A semiconductor device characterized in that a titanium layer is formed on a silicon substrate, and a gold electrode is formed on the titanium layer via a titanium nitride layer.
したことを特徴とする実用新案登録請求の範囲第１項記
載の半導体素子。(2) The semiconductor device according to claim 1, wherein the thickness of the titanium nitride layer is greater than the thickness of the titanium layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12423581U JPS5829851U (en) | 1981-08-21 | 1981-08-21 | semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12423581U JPS5829851U (en) | 1981-08-21 | 1981-08-21 | semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5829851U true JPS5829851U (en) | 1983-02-26 |
Family
ID=29918113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12423581U Pending JPS5829851U (en) | 1981-08-21 | 1981-08-21 | semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5829851U (en) |
-
1981
- 1981-08-21 JP JP12423581U patent/JPS5829851U/en active Pending
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