JPS6127348U - bonding pad electrode - Google Patents
bonding pad electrodeInfo
- Publication number
- JPS6127348U JPS6127348U JP1984110469U JP11046984U JPS6127348U JP S6127348 U JPS6127348 U JP S6127348U JP 1984110469 U JP1984110469 U JP 1984110469U JP 11046984 U JP11046984 U JP 11046984U JP S6127348 U JPS6127348 U JP S6127348U
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- pad electrode
- semiconductor layer
- plan
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
- H01L2224/05089—Disposition of the additional element
- H01L2224/05093—Disposition of the additional element of a plurality of vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
- H01L2224/05089—Disposition of the additional element
- H01L2224/05093—Disposition of the additional element of a plurality of vias
- H01L2224/05096—Uniform arrangement, i.e. array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05557—Shape in side view comprising protrusions or indentations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1A図及び第1B図はそれぞれ本考案に係るボンデイ
ングパッド電極の第1実施例を示す平面図及びそのI−
I線の断面図、第2A図及び第2B図はそれぞれ第1実
坤例において腐食によりん膜の欠損が生じた後の状態を
示す第IA図及ひ第IB図と同様な平面図及びその■−
■線の断面図、第3A図及び第3B図はそれぞれ本考案
に係るボンデイングパッド電極の第2実施例を示す平面
図及びその■−■線の断面図、第4A図及び第4B図は
それぞれ本考案に係るボンデイングパッド電極の第3実
施例を示す平面図及びその■一■線の断面図、第5図は
従来のボンデイングパツド電極を示す平面図、第6図は
第5図において腐食によりボンデイングパッド電極の欠
損が生じた・後の状態を示す第2A図と同様な平面図で
ある。
なお図面に用いた符号において、1・・・パツシベーシ
ョン膜、2・・・ボンデイングパツド電極、3・・・ワ
イヤー、5・・・シリコン基板、7・・・多結晶シリコ
ン膜(半導体層)、9・・・AI膜(金属膜)、であ一
ク●1A and 1B are a plan view showing a first embodiment of a bonding pad electrode according to the present invention, and FIG.
The cross-sectional view taken along line I, FIGS. 2A and 2B are a plan view similar to FIGS. ■−
3A and 3B are a plan view showing the second embodiment of the bonding pad electrode according to the present invention, and a sectional view taken along the line 2 and 4A and 4B, respectively. A plan view showing a third embodiment of the bonding pad electrode according to the present invention and a cross-sectional view taken along the line 1-2 of the same, FIG. 5 is a plan view showing a conventional bonding pad electrode, and FIG. FIG. 2A is a plan view similar to FIG. 2A, showing a state after the bonding pad electrode is damaged due to the above-mentioned problems. In addition, in the symbols used in the drawings, 1... Passivation film, 2... Bonding pad electrode, 3... Wire, 5... Silicon substrate, 7... Polycrystalline silicon film (semiconductor layer). ), 9...AI film (metal film), one click ●
Claims (1)
をそれぞれ具備することを特徴とするボンデイングパッ
ド電極。A bonding pad electrode comprising a semiconductor layer and a metal film provided on the semiconductor layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984110469U JPS6127348U (en) | 1984-07-21 | 1984-07-21 | bonding pad electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984110469U JPS6127348U (en) | 1984-07-21 | 1984-07-21 | bonding pad electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6127348U true JPS6127348U (en) | 1986-02-18 |
Family
ID=30669597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1984110469U Pending JPS6127348U (en) | 1984-07-21 | 1984-07-21 | bonding pad electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6127348U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0377794U (en) * | 1989-11-30 | 1991-08-06 | ||
JPH0454787U (en) * | 1990-09-14 | 1992-05-11 |
-
1984
- 1984-07-21 JP JP1984110469U patent/JPS6127348U/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0377794U (en) * | 1989-11-30 | 1991-08-06 | ||
JPH0454787U (en) * | 1990-09-14 | 1992-05-11 |
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