JPS5829630B2 - プログラマブル半導体装置及びその製造方法 - Google Patents

プログラマブル半導体装置及びその製造方法

Info

Publication number
JPS5829630B2
JPS5829630B2 JP56068473A JP6847381A JPS5829630B2 JP S5829630 B2 JPS5829630 B2 JP S5829630B2 JP 56068473 A JP56068473 A JP 56068473A JP 6847381 A JP6847381 A JP 6847381A JP S5829630 B2 JPS5829630 B2 JP S5829630B2
Authority
JP
Japan
Prior art keywords
circuit element
semiconductor device
strip
conductor
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56068473A
Other languages
English (en)
Japanese (ja)
Other versions
JPS574154A (en
Inventor
アリエ・スロブ
テイエス・シーボルト・テ・フエルデ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS574154A publication Critical patent/JPS574154A/ja
Publication of JPS5829630B2 publication Critical patent/JPS5829630B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
JP56068473A 1980-05-08 1981-05-08 プログラマブル半導体装置及びその製造方法 Expired JPS5829630B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8002635A NL8002635A (nl) 1980-05-08 1980-05-08 Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
JPS574154A JPS574154A (en) 1982-01-09
JPS5829630B2 true JPS5829630B2 (ja) 1983-06-23

Family

ID=19835256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56068473A Expired JPS5829630B2 (ja) 1980-05-08 1981-05-08 プログラマブル半導体装置及びその製造方法

Country Status (7)

Country Link
US (1) US4528583A (OSRAM)
JP (1) JPS5829630B2 (OSRAM)
AU (1) AU7014381A (OSRAM)
DE (1) DE3116324A1 (OSRAM)
FR (1) FR2485265A1 (OSRAM)
GB (1) GB2075750B (OSRAM)
NL (1) NL8002635A (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4879587A (en) * 1986-11-13 1989-11-07 Transensory Devices, Inc. Apparatus and method for forming fusible links
US5121089A (en) * 1990-11-01 1992-06-09 Hughes Aircraft Company Micro-machined switch and method of fabrication
EP0852337A1 (en) * 1996-12-24 1998-07-08 STMicroelectronics S.r.l. A hermetically sealed semiconductor inertial sensor
US6288437B1 (en) * 1999-02-26 2001-09-11 Micron Technology, Inc. Antifuse structures methods and applications
EP1093143A1 (en) * 1999-10-15 2001-04-18 Lucent Technologies Inc. Flip-chip bonded micro-relay on integrated circuit chip
JP3775276B2 (ja) * 2001-10-24 2006-05-17 株式会社デンソー 静電アクチュエータ
US7196369B2 (en) * 2002-07-15 2007-03-27 Macronix International Co., Ltd. Plasma damage protection circuit for a semiconductor device
US7170816B2 (en) * 2004-12-16 2007-01-30 Macronix International Co., Ltd. Method and apparatus for passing charge from word lines during manufacture
US9490249B2 (en) 2014-04-30 2016-11-08 Macronix International Co., Ltd. Antenna effect discharge circuit and manufacturing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1154679A (en) * 1967-03-13 1969-06-11 Ncr Co Magnetic Field Sensing Device.
US3539705A (en) * 1968-05-31 1970-11-10 Westinghouse Electric Corp Microelectronic conductor configurations and method of making the same
US3564354A (en) * 1968-12-11 1971-02-16 Signetics Corp Semiconductor structure with fusible link and method
US3575645A (en) * 1969-07-17 1971-04-20 Gen Motors Corp Power zener package
US3672985A (en) * 1970-05-05 1972-06-27 Westinghouse Electric Corp Conductor elements spaced from microelectronic component surface and methods of making the same
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
GB1311178A (en) * 1970-09-19 1973-03-21 Ferranti Ltd Semiconductor devices
US3783056A (en) * 1972-06-20 1974-01-01 Bell Telephone Labor Inc Technique for the fabrication of an air isolated crossover
US4089734A (en) * 1974-09-16 1978-05-16 Raytheon Company Integrated circuit fusing technique
JPS5240081A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Bi-polar rom
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4222062A (en) * 1976-05-04 1980-09-09 American Microsystems, Inc. VMOS Floating gate memory device
NL181611C (nl) * 1978-11-14 1987-09-16 Philips Nv Werkwijze ter vervaardiging van een bedradingssysteem, alsmede een halfgeleiderinrichting voorzien van een dergelijk bedradingssysteem.

Also Published As

Publication number Publication date
NL8002635A (nl) 1981-12-01
FR2485265A1 (fr) 1981-12-24
JPS574154A (en) 1982-01-09
AU7014381A (en) 1981-11-12
GB2075750B (en) 1983-12-21
GB2075750A (en) 1981-11-18
DE3116324A1 (de) 1982-03-04
US4528583A (en) 1985-07-09
FR2485265B1 (OSRAM) 1984-10-19

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