JPS5826182B2 - 静的バイポ−ラ・メモリ・セル - Google Patents
静的バイポ−ラ・メモリ・セルInfo
- Publication number
- JPS5826182B2 JPS5826182B2 JP55124127A JP12412780A JPS5826182B2 JP S5826182 B2 JPS5826182 B2 JP S5826182B2 JP 55124127 A JP55124127 A JP 55124127A JP 12412780 A JP12412780 A JP 12412780A JP S5826182 B2 JPS5826182 B2 JP S5826182B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- transistor
- island
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 23
- 230000003068 static effect Effects 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 102000004207 Neuropilin-1 Human genes 0.000 description 1
- 108090000772 Neuropilin-1 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5647991A JPS5647991A (en) | 1981-04-30 |
| JPS5826182B2 true JPS5826182B2 (ja) | 1983-06-01 |
Family
ID=19833819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55124127A Expired JPS5826182B2 (ja) | 1979-09-11 | 1980-09-09 | 静的バイポ−ラ・メモリ・セル |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4388636A (OSRAM) |
| JP (1) | JPS5826182B2 (OSRAM) |
| AU (1) | AU538551B2 (OSRAM) |
| CA (1) | CA1143477A (OSRAM) |
| DE (1) | DE3033731C2 (OSRAM) |
| FR (1) | FR2465294A1 (OSRAM) |
| GB (1) | GB2058453B (OSRAM) |
| IT (1) | IT1132700B (OSRAM) |
| NL (1) | NL186934C (OSRAM) |
| SE (1) | SE449937B (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6259977U (OSRAM) * | 1985-10-03 | 1987-04-14 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
| EP0090665B1 (en) * | 1982-03-30 | 1989-05-31 | Fujitsu Limited | Semiconductor memory device |
| JPS59141600U (ja) * | 1983-03-14 | 1984-09-21 | 日立造船富岡機械株式会社 | 抄紙機の紙の水分調節装置 |
| US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
| US5177584A (en) * | 1988-04-11 | 1993-01-05 | Hitachi, Ltd. | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
| FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
| JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
| US4257059A (en) * | 1978-12-20 | 1981-03-17 | Fairchild Camera And Instrument Corp. | Inverse transistor coupled memory cell |
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
-
1979
- 1979-09-11 NL NLAANVRAGE7906752,A patent/NL186934C/xx not_active IP Right Cessation
-
1980
- 1980-08-28 US US06/182,260 patent/US4388636A/en not_active Expired - Lifetime
- 1980-09-02 CA CA000359440A patent/CA1143477A/en not_active Expired
- 1980-09-08 IT IT24530/80A patent/IT1132700B/it active
- 1980-09-08 SE SE8006225A patent/SE449937B/sv not_active IP Right Cessation
- 1980-09-08 GB GB8028935A patent/GB2058453B/en not_active Expired
- 1980-09-08 AU AU62118/80A patent/AU538551B2/en not_active Ceased
- 1980-09-08 DE DE3033731A patent/DE3033731C2/de not_active Expired
- 1980-09-09 JP JP55124127A patent/JPS5826182B2/ja not_active Expired
- 1980-09-10 FR FR8019528A patent/FR2465294A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6259977U (OSRAM) * | 1985-10-03 | 1987-04-14 |
Also Published As
| Publication number | Publication date |
|---|---|
| NL186934B (nl) | 1990-11-01 |
| NL186934C (nl) | 1991-04-02 |
| GB2058453A (en) | 1981-04-08 |
| JPS5647991A (en) | 1981-04-30 |
| SE449937B (sv) | 1987-05-25 |
| CA1143477A (en) | 1983-03-22 |
| GB2058453B (en) | 1983-07-06 |
| DE3033731C2 (de) | 1985-05-30 |
| FR2465294B1 (OSRAM) | 1985-02-15 |
| SE8006225L (sv) | 1981-03-12 |
| US4388636A (en) | 1983-06-14 |
| NL7906752A (nl) | 1981-03-13 |
| IT8024530A0 (it) | 1980-09-08 |
| AU538551B2 (en) | 1984-08-16 |
| AU6211880A (en) | 1981-03-19 |
| DE3033731A1 (de) | 1981-03-26 |
| FR2465294A1 (fr) | 1981-03-20 |
| IT1132700B (it) | 1986-07-02 |
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