FR2465294A1 - Cellule de memoire statique et memoire formee de telles cellules - Google Patents
Cellule de memoire statique et memoire formee de telles cellules Download PDFInfo
- Publication number
- FR2465294A1 FR2465294A1 FR8019528A FR8019528A FR2465294A1 FR 2465294 A1 FR2465294 A1 FR 2465294A1 FR 8019528 A FR8019528 A FR 8019528A FR 8019528 A FR8019528 A FR 8019528A FR 2465294 A1 FR2465294 A1 FR 2465294A1
- Authority
- FR
- France
- Prior art keywords
- type
- conduction
- transistor
- resistance
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 26
- 230000003068 static effect Effects 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 2
- 229920000825 Fique Polymers 0.000 claims 1
- PWNAWOCHVWERAR-UHFFFAOYSA-N Flumetralin Chemical compound [O-][N+](=O)C=1C=C(C(F)(F)F)C=C([N+]([O-])=O)C=1N(CC)CC1=C(F)C=CC=C1Cl PWNAWOCHVWERAR-UHFFFAOYSA-N 0.000 claims 1
- 150000001768 cations Chemical class 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000006880 cross-coupling reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000306 recurrent effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2465294A1 true FR2465294A1 (fr) | 1981-03-20 |
| FR2465294B1 FR2465294B1 (OSRAM) | 1985-02-15 |
Family
ID=19833819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8019528A Granted FR2465294A1 (fr) | 1979-09-11 | 1980-09-10 | Cellule de memoire statique et memoire formee de telles cellules |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4388636A (OSRAM) |
| JP (1) | JPS5826182B2 (OSRAM) |
| AU (1) | AU538551B2 (OSRAM) |
| CA (1) | CA1143477A (OSRAM) |
| DE (1) | DE3033731C2 (OSRAM) |
| FR (1) | FR2465294A1 (OSRAM) |
| GB (1) | GB2058453B (OSRAM) |
| IT (1) | IT1132700B (OSRAM) |
| NL (1) | NL186934C (OSRAM) |
| SE (1) | SE449937B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
| EP0090665B1 (en) * | 1982-03-30 | 1989-05-31 | Fujitsu Limited | Semiconductor memory device |
| JPS59141600U (ja) * | 1983-03-14 | 1984-09-21 | 日立造船富岡機械株式会社 | 抄紙機の紙の水分調節装置 |
| US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
| JPS6259977U (OSRAM) * | 1985-10-03 | 1987-04-14 | ||
| US5177584A (en) * | 1988-04-11 | 1993-01-05 | Hitachi, Ltd. | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
| FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
| JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
| US4257059A (en) * | 1978-12-20 | 1981-03-17 | Fairchild Camera And Instrument Corp. | Inverse transistor coupled memory cell |
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
-
1979
- 1979-09-11 NL NLAANVRAGE7906752,A patent/NL186934C/xx not_active IP Right Cessation
-
1980
- 1980-08-28 US US06/182,260 patent/US4388636A/en not_active Expired - Lifetime
- 1980-09-02 CA CA000359440A patent/CA1143477A/en not_active Expired
- 1980-09-08 IT IT24530/80A patent/IT1132700B/it active
- 1980-09-08 SE SE8006225A patent/SE449937B/sv not_active IP Right Cessation
- 1980-09-08 GB GB8028935A patent/GB2058453B/en not_active Expired
- 1980-09-08 AU AU62118/80A patent/AU538551B2/en not_active Ceased
- 1980-09-08 DE DE3033731A patent/DE3033731C2/de not_active Expired
- 1980-09-09 JP JP55124127A patent/JPS5826182B2/ja not_active Expired
- 1980-09-10 FR FR8019528A patent/FR2465294A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL186934B (nl) | 1990-11-01 |
| NL186934C (nl) | 1991-04-02 |
| GB2058453A (en) | 1981-04-08 |
| JPS5647991A (en) | 1981-04-30 |
| JPS5826182B2 (ja) | 1983-06-01 |
| SE449937B (sv) | 1987-05-25 |
| CA1143477A (en) | 1983-03-22 |
| GB2058453B (en) | 1983-07-06 |
| DE3033731C2 (de) | 1985-05-30 |
| FR2465294B1 (OSRAM) | 1985-02-15 |
| SE8006225L (sv) | 1981-03-12 |
| US4388636A (en) | 1983-06-14 |
| NL7906752A (nl) | 1981-03-13 |
| IT8024530A0 (it) | 1980-09-08 |
| AU538551B2 (en) | 1984-08-16 |
| AU6211880A (en) | 1981-03-19 |
| DE3033731A1 (de) | 1981-03-26 |
| IT1132700B (it) | 1986-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |