SE449937B - Statisk bipoler minnescell och minne konstruerat av sadana celler - Google Patents
Statisk bipoler minnescell och minne konstruerat av sadana cellerInfo
- Publication number
- SE449937B SE449937B SE8006225A SE8006225A SE449937B SE 449937 B SE449937 B SE 449937B SE 8006225 A SE8006225 A SE 8006225A SE 8006225 A SE8006225 A SE 8006225A SE 449937 B SE449937 B SE 449937B
- Authority
- SE
- Sweden
- Prior art keywords
- conductivity type
- zone
- transistor
- island
- collector
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims description 21
- 230000003068 static effect Effects 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8006225L SE8006225L (sv) | 1981-03-12 |
| SE449937B true SE449937B (sv) | 1987-05-25 |
Family
ID=19833819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8006225A SE449937B (sv) | 1979-09-11 | 1980-09-08 | Statisk bipoler minnescell och minne konstruerat av sadana celler |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4388636A (OSRAM) |
| JP (1) | JPS5826182B2 (OSRAM) |
| AU (1) | AU538551B2 (OSRAM) |
| CA (1) | CA1143477A (OSRAM) |
| DE (1) | DE3033731C2 (OSRAM) |
| FR (1) | FR2465294A1 (OSRAM) |
| GB (1) | GB2058453B (OSRAM) |
| IT (1) | IT1132700B (OSRAM) |
| NL (1) | NL186934C (OSRAM) |
| SE (1) | SE449937B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
| EP0090665B1 (en) * | 1982-03-30 | 1989-05-31 | Fujitsu Limited | Semiconductor memory device |
| JPS59141600U (ja) * | 1983-03-14 | 1984-09-21 | 日立造船富岡機械株式会社 | 抄紙機の紙の水分調節装置 |
| US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
| JPS6259977U (OSRAM) * | 1985-10-03 | 1987-04-14 | ||
| US5177584A (en) * | 1988-04-11 | 1993-01-05 | Hitachi, Ltd. | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
| FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
| JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
| US4257059A (en) * | 1978-12-20 | 1981-03-17 | Fairchild Camera And Instrument Corp. | Inverse transistor coupled memory cell |
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
-
1979
- 1979-09-11 NL NLAANVRAGE7906752,A patent/NL186934C/xx not_active IP Right Cessation
-
1980
- 1980-08-28 US US06/182,260 patent/US4388636A/en not_active Expired - Lifetime
- 1980-09-02 CA CA000359440A patent/CA1143477A/en not_active Expired
- 1980-09-08 IT IT24530/80A patent/IT1132700B/it active
- 1980-09-08 SE SE8006225A patent/SE449937B/sv not_active IP Right Cessation
- 1980-09-08 GB GB8028935A patent/GB2058453B/en not_active Expired
- 1980-09-08 AU AU62118/80A patent/AU538551B2/en not_active Ceased
- 1980-09-08 DE DE3033731A patent/DE3033731C2/de not_active Expired
- 1980-09-09 JP JP55124127A patent/JPS5826182B2/ja not_active Expired
- 1980-09-10 FR FR8019528A patent/FR2465294A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL186934B (nl) | 1990-11-01 |
| NL186934C (nl) | 1991-04-02 |
| GB2058453A (en) | 1981-04-08 |
| JPS5647991A (en) | 1981-04-30 |
| JPS5826182B2 (ja) | 1983-06-01 |
| CA1143477A (en) | 1983-03-22 |
| GB2058453B (en) | 1983-07-06 |
| DE3033731C2 (de) | 1985-05-30 |
| FR2465294B1 (OSRAM) | 1985-02-15 |
| SE8006225L (sv) | 1981-03-12 |
| US4388636A (en) | 1983-06-14 |
| NL7906752A (nl) | 1981-03-13 |
| IT8024530A0 (it) | 1980-09-08 |
| AU538551B2 (en) | 1984-08-16 |
| AU6211880A (en) | 1981-03-19 |
| DE3033731A1 (de) | 1981-03-26 |
| FR2465294A1 (fr) | 1981-03-20 |
| IT1132700B (it) | 1986-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 8006225-0 Effective date: 19940410 Format of ref document f/p: F |