FR2465294B1 - - Google Patents
Info
- Publication number
- FR2465294B1 FR2465294B1 FR8019528A FR8019528A FR2465294B1 FR 2465294 B1 FR2465294 B1 FR 2465294B1 FR 8019528 A FR8019528 A FR 8019528A FR 8019528 A FR8019528 A FR 8019528A FR 2465294 B1 FR2465294 B1 FR 2465294B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2465294A1 FR2465294A1 (fr) | 1981-03-20 |
| FR2465294B1 true FR2465294B1 (OSRAM) | 1985-02-15 |
Family
ID=19833819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8019528A Granted FR2465294A1 (fr) | 1979-09-11 | 1980-09-10 | Cellule de memoire statique et memoire formee de telles cellules |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4388636A (OSRAM) |
| JP (1) | JPS5826182B2 (OSRAM) |
| AU (1) | AU538551B2 (OSRAM) |
| CA (1) | CA1143477A (OSRAM) |
| DE (1) | DE3033731C2 (OSRAM) |
| FR (1) | FR2465294A1 (OSRAM) |
| GB (1) | GB2058453B (OSRAM) |
| IT (1) | IT1132700B (OSRAM) |
| NL (1) | NL186934C (OSRAM) |
| SE (1) | SE449937B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
| EP0090665B1 (en) * | 1982-03-30 | 1989-05-31 | Fujitsu Limited | Semiconductor memory device |
| JPS59141600U (ja) * | 1983-03-14 | 1984-09-21 | 日立造船富岡機械株式会社 | 抄紙機の紙の水分調節装置 |
| US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
| JPS6259977U (OSRAM) * | 1985-10-03 | 1987-04-14 | ||
| US5177584A (en) * | 1988-04-11 | 1993-01-05 | Hitachi, Ltd. | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
| FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
| JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
| US4257059A (en) * | 1978-12-20 | 1981-03-17 | Fairchild Camera And Instrument Corp. | Inverse transistor coupled memory cell |
| NL186934C (nl) | 1979-09-11 | 1991-04-02 | Philips Nv | Statische bipolaire geheugencel. |
-
1979
- 1979-09-11 NL NLAANVRAGE7906752,A patent/NL186934C/xx not_active IP Right Cessation
-
1980
- 1980-08-28 US US06/182,260 patent/US4388636A/en not_active Expired - Lifetime
- 1980-09-02 CA CA000359440A patent/CA1143477A/en not_active Expired
- 1980-09-08 IT IT24530/80A patent/IT1132700B/it active
- 1980-09-08 SE SE8006225A patent/SE449937B/sv not_active IP Right Cessation
- 1980-09-08 GB GB8028935A patent/GB2058453B/en not_active Expired
- 1980-09-08 AU AU62118/80A patent/AU538551B2/en not_active Ceased
- 1980-09-08 DE DE3033731A patent/DE3033731C2/de not_active Expired
- 1980-09-09 JP JP55124127A patent/JPS5826182B2/ja not_active Expired
- 1980-09-10 FR FR8019528A patent/FR2465294A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL186934B (nl) | 1990-11-01 |
| NL186934C (nl) | 1991-04-02 |
| GB2058453A (en) | 1981-04-08 |
| JPS5647991A (en) | 1981-04-30 |
| JPS5826182B2 (ja) | 1983-06-01 |
| SE449937B (sv) | 1987-05-25 |
| CA1143477A (en) | 1983-03-22 |
| GB2058453B (en) | 1983-07-06 |
| DE3033731C2 (de) | 1985-05-30 |
| SE8006225L (sv) | 1981-03-12 |
| US4388636A (en) | 1983-06-14 |
| NL7906752A (nl) | 1981-03-13 |
| IT8024530A0 (it) | 1980-09-08 |
| AU538551B2 (en) | 1984-08-16 |
| AU6211880A (en) | 1981-03-19 |
| DE3033731A1 (de) | 1981-03-26 |
| FR2465294A1 (fr) | 1981-03-20 |
| IT1132700B (it) | 1986-07-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |