JPS5825226A - プラズマ気相反応装置 - Google Patents

プラズマ気相反応装置

Info

Publication number
JPS5825226A
JPS5825226A JP57126046A JP12604682A JPS5825226A JP S5825226 A JPS5825226 A JP S5825226A JP 57126046 A JP57126046 A JP 57126046A JP 12604682 A JP12604682 A JP 12604682A JP S5825226 A JPS5825226 A JP S5825226A
Authority
JP
Japan
Prior art keywords
reaction
semiconductor layer
chamber
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57126046A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243536B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57126046A priority Critical patent/JPS5825226A/ja
Publication of JPS5825226A publication Critical patent/JPS5825226A/ja
Publication of JPS6243536B2 publication Critical patent/JPS6243536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
JP57126046A 1982-07-19 1982-07-19 プラズマ気相反応装置 Granted JPS5825226A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57126046A JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57126046A JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Division JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5825226A true JPS5825226A (ja) 1983-02-15
JPS6243536B2 JPS6243536B2 (enExample) 1987-09-14

Family

ID=14925306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57126046A Granted JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置

Country Status (1)

Country Link
JP (1) JPS5825226A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (ja) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPS60189274A (ja) * 1984-02-14 1985-09-26 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 半導体素子の製造方法
JPS6183700A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 気相エピタキシヤル成長方法およびその装置
JPS6289875A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS6373363U (enExample) * 1986-10-31 1988-05-16
JPH0195515A (ja) * 1987-10-07 1989-04-13 Matsushita Electric Ind Co Ltd ヘテロ接合素子の製造方法
US5162255A (en) * 1989-04-27 1992-11-10 Fujitsu Limited Method for manufacturing a hetero bipolar transistor
US8091668B2 (en) 2008-11-06 2012-01-10 Toyoda Jidosha Kabushiki Kaisha Motor vehicle and control method of motor vehicle
JP2021116458A (ja) * 2020-01-27 2021-08-10 住友金属鉱山株式会社 炭化ケイ素多結晶基板の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (ja) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPS60189274A (ja) * 1984-02-14 1985-09-26 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド 半導体素子の製造方法
JPS6183700A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 気相エピタキシヤル成長方法およびその装置
JPS6289875A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS6373363U (enExample) * 1986-10-31 1988-05-16
JPH0195515A (ja) * 1987-10-07 1989-04-13 Matsushita Electric Ind Co Ltd ヘテロ接合素子の製造方法
US5162255A (en) * 1989-04-27 1992-11-10 Fujitsu Limited Method for manufacturing a hetero bipolar transistor
US8091668B2 (en) 2008-11-06 2012-01-10 Toyoda Jidosha Kabushiki Kaisha Motor vehicle and control method of motor vehicle
JP2021116458A (ja) * 2020-01-27 2021-08-10 住友金属鉱山株式会社 炭化ケイ素多結晶基板の製造方法

Also Published As

Publication number Publication date
JPS6243536B2 (enExample) 1987-09-14

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