JPS5825221A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5825221A
JPS5825221A JP57087878A JP8787882A JPS5825221A JP S5825221 A JPS5825221 A JP S5825221A JP 57087878 A JP57087878 A JP 57087878A JP 8787882 A JP8787882 A JP 8787882A JP S5825221 A JPS5825221 A JP S5825221A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
manufacturing
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57087878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643046B2 (enrdf_load_stackoverflow
Inventor
Hiroyuki Tango
丹呉　浩侑
Yoshihisa Mizutani
水谷　嘉久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57087878A priority Critical patent/JPS5825221A/ja
Publication of JPS5825221A publication Critical patent/JPS5825221A/ja
Publication of JPS643046B2 publication Critical patent/JPS643046B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP57087878A 1982-05-26 1982-05-26 半導体装置の製造方法 Granted JPS5825221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57087878A JPS5825221A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087878A JPS5825221A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP14327079A Division JPS5667923A (en) 1979-11-07 1979-11-07 Preparation method of semiconductor system

Publications (2)

Publication Number Publication Date
JPS5825221A true JPS5825221A (ja) 1983-02-15
JPS643046B2 JPS643046B2 (enrdf_load_stackoverflow) 1989-01-19

Family

ID=13927117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087878A Granted JPS5825221A (ja) 1982-05-26 1982-05-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5825221A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156956A (ja) * 1984-08-28 1986-03-22 Seiko Instr & Electronics Ltd 基準電極
JPS6163049A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol Ｓｏｉ形成方法
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5011589A (en) * 1988-09-30 1991-04-30 Kabushiki Kaisha Toshiba Solution component sensor device
JP2010258481A (ja) * 2010-08-17 2010-11-11 Semiconductor Technology Academic Research Center 半導体装置の製造方法
US8963124B2 (en) 2008-03-18 2015-02-24 Semiconductor Technology Academic Research Center Semiconductor device including a plurality of different functional elements and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156956A (ja) * 1984-08-28 1986-03-22 Seiko Instr & Electronics Ltd 基準電極
JPS6163049A (ja) * 1984-09-04 1986-04-01 Agency Of Ind Science & Technol Ｓｏｉ形成方法
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5011589A (en) * 1988-09-30 1991-04-30 Kabushiki Kaisha Toshiba Solution component sensor device
US8963124B2 (en) 2008-03-18 2015-02-24 Semiconductor Technology Academic Research Center Semiconductor device including a plurality of different functional elements and method of manufacturing the same
JP2010258481A (ja) * 2010-08-17 2010-11-11 Semiconductor Technology Academic Research Center 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS643046B2 (enrdf_load_stackoverflow) 1989-01-19

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