JPS58218103A - 厚膜型正特性半導体素子の製造方法 - Google Patents

Info

Publication number

JPS58218103A

JPS58218103A JP10182082A JP10182082A JPS58218103A JP S58218103 A JPS58218103 A JP S58218103A JP 10182082 A JP10182082 A JP 10182082A JP 10182082 A JP10182082 A JP 10182082A JP S58218103 A JPS58218103 A JP S58218103A

Authority

JP

Japan

Prior art keywords

semiconductor element

thick film

mosi2

film type

type positive

Prior art date

1982-06-14

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 239000004065 semiconductor Substances 0.000 title claims description 16
• 238000000034 method Methods 0.000 title claims description 11
• 229910020968 MoSi2 Inorganic materials 0.000 claims description 16
• 239000000843 powder Substances 0.000 claims description 15
• 238000004519 manufacturing process Methods 0.000 claims description 7
• JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 5
• 229910002113 barium titanate Inorganic materials 0.000 claims description 5
• 239000000758 substrate Substances 0.000 claims description 4
• 238000010304 firing Methods 0.000 claims description 3
• 239000010408 film Substances 0.000 description 14
• 239000011521 glass Substances 0.000 description 12
• 239000000203 mixture Substances 0.000 description 7
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
• 239000002482 conductive additive Substances 0.000 description 6
• 239000002245 particle Substances 0.000 description 5
• 229910052681 coesite Inorganic materials 0.000 description 3
• 229910052906 cristobalite Inorganic materials 0.000 description 3
• 238000010438 heat treatment Methods 0.000 description 3
• 239000003960 organic solvent Substances 0.000 description 3
• 230000035939 shock Effects 0.000 description 3
• 239000000377 silicon dioxide Substances 0.000 description 3
• 235000012239 silicon dioxide Nutrition 0.000 description 3
• 229910052682 stishovite Inorganic materials 0.000 description 3
• 229910052905 tridymite Inorganic materials 0.000 description 3
• WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
• OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
• 229940088601 alpha-terpineol Drugs 0.000 description 2
• 229910016006 MoSi Inorganic materials 0.000 description 1
• 239000000654 additive Substances 0.000 description 1
• 239000011230 binding agent Substances 0.000 description 1
• 239000003795 chemical substances by application Substances 0.000 description 1
• 239000011248 coating agent Substances 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 239000004020 conductor Substances 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 230000020169 heat generation Effects 0.000 description 1
• 229910052751 metal Inorganic materials 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 238000000465 moulding Methods 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 235000011837 pasties Nutrition 0.000 description 1
• 238000005498 polishing Methods 0.000 description 1
• 238000007639 printing Methods 0.000 description 1
• 239000010409 thin film Substances 0.000 description 1
• 238000001771 vacuum deposition Methods 0.000 description 1