JPS58216473A - ダイオ−ド - Google Patents

ダイオ−ド

Info

Publication number
JPS58216473A
JPS58216473A JP57099196A JP9919682A JPS58216473A JP S58216473 A JPS58216473 A JP S58216473A JP 57099196 A JP57099196 A JP 57099196A JP 9919682 A JP9919682 A JP 9919682A JP S58216473 A JPS58216473 A JP S58216473A
Authority
JP
Japan
Prior art keywords
layer
type
diode
region
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57099196A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033954B2 (enExample
Inventor
Yoshiteru Shimizu
清水　喜輝
Masami Naito
正美 内藤
Yoshio Terasawa
寺沢　義雄
Susumu Murakami
進 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57099196A priority Critical patent/JPS58216473A/ja
Publication of JPS58216473A publication Critical patent/JPS58216473A/ja
Publication of JPH033954B2 publication Critical patent/JPH033954B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57099196A 1982-06-11 1982-06-11 ダイオ−ド Granted JPS58216473A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57099196A JPS58216473A (ja) 1982-06-11 1982-06-11 ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57099196A JPS58216473A (ja) 1982-06-11 1982-06-11 ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS58216473A true JPS58216473A (ja) 1983-12-16
JPH033954B2 JPH033954B2 (enExample) 1991-01-21

Family

ID=14240889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57099196A Granted JPS58216473A (ja) 1982-06-11 1982-06-11 ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS58216473A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141515A (ja) * 2000-10-31 2002-05-17 Fuji Electric Co Ltd 半導体装置
JP2004039842A (ja) * 2002-07-03 2004-02-05 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
JP2006049473A (ja) * 2004-08-03 2006-02-16 Toyota Central Res & Dev Lab Inc 縦型半導体装置
JP2007096348A (ja) * 2001-02-23 2007-04-12 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2007123932A (ja) * 2001-02-23 2007-05-17 Fuji Electric Device Technology Co Ltd 半導体装置
JP2009224794A (ja) * 2002-02-20 2009-10-01 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
WO2011052787A1 (ja) * 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
WO2011105434A1 (ja) * 2010-02-23 2011-09-01 富士電機ホールディングス株式会社 半導体装置
JP5282818B2 (ja) * 2009-05-28 2013-09-04 トヨタ自動車株式会社 ダイオードの製造方法、及び、ダイオード
JP2023554043A (ja) * 2020-12-15 2023-12-26 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 半導体デバイスのための構造体および半導体デバイスのための構造体を製造するための方法

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141515A (ja) * 2000-10-31 2002-05-17 Fuji Electric Co Ltd 半導体装置
JP2007096348A (ja) * 2001-02-23 2007-04-12 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2007123932A (ja) * 2001-02-23 2007-05-17 Fuji Electric Device Technology Co Ltd 半導体装置
JP2009224794A (ja) * 2002-02-20 2009-10-01 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP2004039842A (ja) * 2002-07-03 2004-02-05 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
JP2006049473A (ja) * 2004-08-03 2006-02-16 Toyota Central Res & Dev Lab Inc 縦型半導体装置
JP5282818B2 (ja) * 2009-05-28 2013-09-04 トヨタ自動車株式会社 ダイオードの製造方法、及び、ダイオード
JP5569532B2 (ja) * 2009-11-02 2014-08-13 富士電機株式会社 半導体装置および半導体装置の製造方法
US10847608B2 (en) 2009-11-02 2020-11-24 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8766413B2 (en) 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011052787A1 (ja) * 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
US10998398B2 (en) 2009-11-02 2021-05-04 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US10868111B2 (en) 2009-11-02 2020-12-15 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9070658B2 (en) 2009-11-02 2015-06-30 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9252209B2 (en) 2009-11-02 2016-02-02 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US10043865B2 (en) 2009-11-02 2018-08-07 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20180350902A1 (en) 2009-11-02 2018-12-06 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011105434A1 (ja) * 2010-02-23 2011-09-01 富士電機ホールディングス株式会社 半導体装置
US8896084B2 (en) 2010-02-23 2014-11-25 Yoshitaka Sugawara Semiconductor device
JP5607720B2 (ja) * 2010-02-23 2014-10-15 良孝 菅原 半導体装置
JP2023554043A (ja) * 2020-12-15 2023-12-26 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 半導体デバイスのための構造体および半導体デバイスのための構造体を製造するための方法

Also Published As

Publication number Publication date
JPH033954B2 (enExample) 1991-01-21

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