JPS58210616A - 電子ビ−ム描画方法 - Google Patents
電子ビ−ム描画方法Info
- Publication number
- JPS58210616A JPS58210616A JP9290582A JP9290582A JPS58210616A JP S58210616 A JPS58210616 A JP S58210616A JP 9290582 A JP9290582 A JP 9290582A JP 9290582 A JP9290582 A JP 9290582A JP S58210616 A JPS58210616 A JP S58210616A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- stage
- resist
- minimum
- accelerating voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000001133 acceleration Effects 0.000 claims description 26
- 238000000609 electron-beam lithography Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 14
- 238000001514 detection method Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9290582A JPS58210616A (ja) | 1982-05-31 | 1982-05-31 | 電子ビ−ム描画方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9290582A JPS58210616A (ja) | 1982-05-31 | 1982-05-31 | 電子ビ−ム描画方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58210616A true JPS58210616A (ja) | 1983-12-07 |
| JPH056336B2 JPH056336B2 (enrdf_load_stackoverflow) | 1993-01-26 |
Family
ID=14067492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9290582A Granted JPS58210616A (ja) | 1982-05-31 | 1982-05-31 | 電子ビ−ム描画方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58210616A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013207045A (ja) * | 2012-03-28 | 2013-10-07 | Toppan Printing Co Ltd | パターン描画方法およびそれを用いるパターン描画装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380168A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Exposure method for electronic beam |
| JPS5382176A (en) * | 1976-12-27 | 1978-07-20 | Ibm | Method of forming resist pattern |
| JPS5726436A (en) * | 1980-07-23 | 1982-02-12 | Fujitsu Ltd | Extraction pattern for electron scattering intensity distribution |
| JPS5783029A (en) * | 1980-11-11 | 1982-05-24 | Fujitsu Ltd | Exposure of electron beam |
-
1982
- 1982-05-31 JP JP9290582A patent/JPS58210616A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380168A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Exposure method for electronic beam |
| JPS5382176A (en) * | 1976-12-27 | 1978-07-20 | Ibm | Method of forming resist pattern |
| JPS5726436A (en) * | 1980-07-23 | 1982-02-12 | Fujitsu Ltd | Extraction pattern for electron scattering intensity distribution |
| JPS5783029A (en) * | 1980-11-11 | 1982-05-24 | Fujitsu Ltd | Exposure of electron beam |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013207045A (ja) * | 2012-03-28 | 2013-10-07 | Toppan Printing Co Ltd | パターン描画方法およびそれを用いるパターン描画装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH056336B2 (enrdf_load_stackoverflow) | 1993-01-26 |
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