JPS58210616A - 電子ビ−ム描画方法 - Google Patents

電子ビ−ム描画方法

Info

Publication number
JPS58210616A
JPS58210616A JP9290582A JP9290582A JPS58210616A JP S58210616 A JPS58210616 A JP S58210616A JP 9290582 A JP9290582 A JP 9290582A JP 9290582 A JP9290582 A JP 9290582A JP S58210616 A JPS58210616 A JP S58210616A
Authority
JP
Japan
Prior art keywords
electron beam
stage
resist
minimum
accelerating voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9290582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH056336B2 (enrdf_load_stackoverflow
Inventor
Tadahiro Takigawa
忠宏 滝川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9290582A priority Critical patent/JPS58210616A/ja
Publication of JPS58210616A publication Critical patent/JPS58210616A/ja
Publication of JPH056336B2 publication Critical patent/JPH056336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP9290582A 1982-05-31 1982-05-31 電子ビ−ム描画方法 Granted JPS58210616A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9290582A JPS58210616A (ja) 1982-05-31 1982-05-31 電子ビ−ム描画方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9290582A JPS58210616A (ja) 1982-05-31 1982-05-31 電子ビ−ム描画方法

Publications (2)

Publication Number Publication Date
JPS58210616A true JPS58210616A (ja) 1983-12-07
JPH056336B2 JPH056336B2 (enrdf_load_stackoverflow) 1993-01-26

Family

ID=14067492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9290582A Granted JPS58210616A (ja) 1982-05-31 1982-05-31 電子ビ−ム描画方法

Country Status (1)

Country Link
JP (1) JPS58210616A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207045A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd パターン描画方法およびそれを用いるパターン描画装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380168A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Exposure method for electronic beam
JPS5382176A (en) * 1976-12-27 1978-07-20 Ibm Method of forming resist pattern
JPS5726436A (en) * 1980-07-23 1982-02-12 Fujitsu Ltd Extraction pattern for electron scattering intensity distribution
JPS5783029A (en) * 1980-11-11 1982-05-24 Fujitsu Ltd Exposure of electron beam

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380168A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Exposure method for electronic beam
JPS5382176A (en) * 1976-12-27 1978-07-20 Ibm Method of forming resist pattern
JPS5726436A (en) * 1980-07-23 1982-02-12 Fujitsu Ltd Extraction pattern for electron scattering intensity distribution
JPS5783029A (en) * 1980-11-11 1982-05-24 Fujitsu Ltd Exposure of electron beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207045A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd パターン描画方法およびそれを用いるパターン描画装置

Also Published As

Publication number Publication date
JPH056336B2 (enrdf_load_stackoverflow) 1993-01-26

Similar Documents

Publication Publication Date Title
KR100819293B1 (ko) 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치
JPH0513037A (ja) 荷電粒子ビーム装置及びその制御方法
US20080265174A1 (en) Charged particle beam writing apparatus and method
JPS58210616A (ja) 電子ビ−ム描画方法
JPH0779075B2 (ja) 電子ビーム露光装置
JPS6258621A (ja) 微細パタ−ン形成方法
JPS58210617A (ja) 電子ビ−ム描画方法
JP2010267725A (ja) 荷電粒子ビーム描画方法
JP2824340B2 (ja) 断面加工観察方法
JPH01248617A (ja) 荷電粒子ビーム露光装置
JPS6182428A (ja) 電荷ビ−ム光学鏡筒のレンズ調整方法
JP2786660B2 (ja) 荷電ビーム描画方法
JP3388066B2 (ja) 電子ビーム露光装置及びこの装置における偏向効率調整方法
JP2786662B2 (ja) 荷電ビーム描画方法
JPH01278725A (ja) 荷電粒子ビーム露光装置
JP2796121B2 (ja) 電子線描画方法および電子線描画装置
JPH07111943B2 (ja) 電子ビ−ム露光装置
JPS6312146A (ja) パタ−ン寸法計測方法
JP3198187B2 (ja) 荷電粒子ビーム露光装置の調整方法
JP2786661B2 (ja) 荷電ビーム描画方法
JPH06140309A (ja) 電子ビーム露光方法
JP3161101B2 (ja) 荷電粒子線描画装置
JP3469568B2 (ja) 荷電ビーム描画方法及び描画装置
JP2003332203A (ja) 荷電粒子ビーム描画方法
JP6478782B2 (ja) ビームドリフト量の測定方法