JPS582067A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS582067A
JPS582067A JP56098203A JP9820381A JPS582067A JP S582067 A JPS582067 A JP S582067A JP 56098203 A JP56098203 A JP 56098203A JP 9820381 A JP9820381 A JP 9820381A JP S582067 A JPS582067 A JP S582067A
Authority
JP
Japan
Prior art keywords
substrate
ion implantation
source
impurity
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56098203A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0552069B2 (enExample
Inventor
Sunao Shibata
直 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56098203A priority Critical patent/JPS582067A/ja
Publication of JPS582067A publication Critical patent/JPS582067A/ja
Publication of JPH0552069B2 publication Critical patent/JPH0552069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
JP56098203A 1981-06-26 1981-06-26 半導体装置の製造方法 Granted JPS582067A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56098203A JPS582067A (ja) 1981-06-26 1981-06-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56098203A JPS582067A (ja) 1981-06-26 1981-06-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS582067A true JPS582067A (ja) 1983-01-07
JPH0552069B2 JPH0552069B2 (enExample) 1993-08-04

Family

ID=14213434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56098203A Granted JPS582067A (ja) 1981-06-26 1981-06-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS582067A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283066A (ja) * 1986-11-10 1988-11-18 Yokogawa Hewlett Packard Ltd 電界効果トランジスタ構造
JPH05131557A (ja) * 1991-02-28 1993-05-28 Sudo Norito 多孔質フイルムの製造装置
JPH0745818A (ja) * 1993-07-30 1995-02-14 Nec Corp 不均一チャネルドープｍｏｓトランジスタ及びその製造方法
JPH0818047A (ja) * 1994-06-27 1996-01-19 Nec Corp Ｍｉｓｆｅｔおよびその製造方法
US5801426A (en) * 1994-08-17 1998-09-01 Nec Corporation Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
JP2012199264A (ja) * 2011-03-18 2012-10-18 Seiko Epson Corp 半導体装置の製造方法および電気光学装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138178A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Field-defect semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138178A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Field-defect semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283066A (ja) * 1986-11-10 1988-11-18 Yokogawa Hewlett Packard Ltd 電界効果トランジスタ構造
JPH05131557A (ja) * 1991-02-28 1993-05-28 Sudo Norito 多孔質フイルムの製造装置
JPH0745818A (ja) * 1993-07-30 1995-02-14 Nec Corp 不均一チャネルドープｍｏｓトランジスタ及びその製造方法
JPH0818047A (ja) * 1994-06-27 1996-01-19 Nec Corp Ｍｉｓｆｅｔおよびその製造方法
US5801426A (en) * 1994-08-17 1998-09-01 Nec Corporation Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
US5990522A (en) * 1994-08-17 1999-11-23 Nec Corporation Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
US6163057A (en) * 1994-08-17 2000-12-19 Nec Corporation Field effect transistor with improved source/drain diffusion regions having an extremely small capacitance
JP2012199264A (ja) * 2011-03-18 2012-10-18 Seiko Epson Corp 半導体装置の製造方法および電気光学装置の製造方法

Also Published As

Publication number Publication date
JPH0552069B2 (enExample) 1993-08-04

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