JPS58200531A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58200531A
JPS58200531A JP57082475A JP8247582A JPS58200531A JP S58200531 A JPS58200531 A JP S58200531A JP 57082475 A JP57082475 A JP 57082475A JP 8247582 A JP8247582 A JP 8247582A JP S58200531 A JPS58200531 A JP S58200531A
Authority
JP
Japan
Prior art keywords
molybdenum
film
silicon
oxidation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57082475A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410218B2 (enExample
Inventor
Hiroshi Hougen
寛 法元
Shinjirou Shikura
四倉　愼次郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57082475A priority Critical patent/JPS58200531A/ja
Publication of JPS58200531A publication Critical patent/JPS58200531A/ja
Publication of JPH0410218B2 publication Critical patent/JPH0410218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57082475A 1982-05-18 1982-05-18 半導体装置の製造方法 Granted JPS58200531A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57082475A JPS58200531A (ja) 1982-05-18 1982-05-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57082475A JPS58200531A (ja) 1982-05-18 1982-05-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58200531A true JPS58200531A (ja) 1983-11-22
JPH0410218B2 JPH0410218B2 (enExample) 1992-02-24

Family

ID=13775532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57082475A Granted JPS58200531A (ja) 1982-05-18 1982-05-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58200531A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174975A (ja) * 1986-01-28 1987-07-31 Nec Corp 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537276A (en) * 1976-07-08 1978-01-23 Kato Giichirou Ddc bias type field strength measuring instrument
JPS56158454A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537276A (en) * 1976-07-08 1978-01-23 Kato Giichirou Ddc bias type field strength measuring instrument
JPS56158454A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174975A (ja) * 1986-01-28 1987-07-31 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPH0410218B2 (enExample) 1992-02-24

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