JPS58199523A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58199523A
JPS58199523A JP57081576A JP8157682A JPS58199523A JP S58199523 A JPS58199523 A JP S58199523A JP 57081576 A JP57081576 A JP 57081576A JP 8157682 A JP8157682 A JP 8157682A JP S58199523 A JPS58199523 A JP S58199523A
Authority
JP
Japan
Prior art keywords
layer
film
wiring
oxygen concentration
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57081576A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0113224B2 (cg-RX-API-DMAC10.html
Inventor
Shinichi Ofuji
大藤　晋一
Tetsuo Hosoya
細矢　徹夫
Chisato Hashimoto
橋本　千里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57081576A priority Critical patent/JPS58199523A/ja
Publication of JPS58199523A publication Critical patent/JPS58199523A/ja
Publication of JPH0113224B2 publication Critical patent/JPH0113224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57081576A 1982-05-17 1982-05-17 半導体装置の製造方法 Granted JPS58199523A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57081576A JPS58199523A (ja) 1982-05-17 1982-05-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57081576A JPS58199523A (ja) 1982-05-17 1982-05-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58199523A true JPS58199523A (ja) 1983-11-19
JPH0113224B2 JPH0113224B2 (cg-RX-API-DMAC10.html) 1989-03-03

Family

ID=13750128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57081576A Granted JPS58199523A (ja) 1982-05-17 1982-05-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58199523A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807015A (en) * 1984-12-24 1989-02-21 Hitachi, Ltd. Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4807015A (en) * 1984-12-24 1989-02-21 Hitachi, Ltd. Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide

Also Published As

Publication number Publication date
JPH0113224B2 (cg-RX-API-DMAC10.html) 1989-03-03

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