JPS58197877A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS58197877A JPS58197877A JP57080944A JP8094482A JPS58197877A JP S58197877 A JPS58197877 A JP S58197877A JP 57080944 A JP57080944 A JP 57080944A JP 8094482 A JP8094482 A JP 8094482A JP S58197877 A JPS58197877 A JP S58197877A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- emitter
- base
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract description 3
- -1 arsenic ions Chemical class 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 235000012544 Viola sororia Nutrition 0.000 description 1
- 241001106476 Violaceae Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57080944A JPS58197877A (ja) | 1982-05-14 | 1982-05-14 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57080944A JPS58197877A (ja) | 1982-05-14 | 1982-05-14 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58197877A true JPS58197877A (ja) | 1983-11-17 |
JPH0247854B2 JPH0247854B2 (enrdf_load_stackoverflow) | 1990-10-23 |
Family
ID=13732596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57080944A Granted JPS58197877A (ja) | 1982-05-14 | 1982-05-14 | 半導体集積回路装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58197877A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037775A (ja) * | 1983-07-05 | 1985-02-27 | フエアチアイルド カメラ アンド インストルメント コーポレーシヨン | 集積回路構成体の製造方法 |
JPS60226163A (ja) * | 1984-04-17 | 1985-11-11 | ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン | シヨツトキ−バイポ−ラトランジスタを有するcmos構造を製造する方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55157258A (en) * | 1979-05-25 | 1980-12-06 | Raytheon Co | Semiconductor device and method of fabricating same |
-
1982
- 1982-05-14 JP JP57080944A patent/JPS58197877A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55157258A (en) * | 1979-05-25 | 1980-12-06 | Raytheon Co | Semiconductor device and method of fabricating same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037775A (ja) * | 1983-07-05 | 1985-02-27 | フエアチアイルド カメラ アンド インストルメント コーポレーシヨン | 集積回路構成体の製造方法 |
JPS60226163A (ja) * | 1984-04-17 | 1985-11-11 | ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン | シヨツトキ−バイポ−ラトランジスタを有するcmos構造を製造する方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0247854B2 (enrdf_load_stackoverflow) | 1990-10-23 |
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