JPH0247854B2 - - Google Patents
Info
- Publication number
- JPH0247854B2 JPH0247854B2 JP57080944A JP8094482A JPH0247854B2 JP H0247854 B2 JPH0247854 B2 JP H0247854B2 JP 57080944 A JP57080944 A JP 57080944A JP 8094482 A JP8094482 A JP 8094482A JP H0247854 B2 JPH0247854 B2 JP H0247854B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- film
- semiconductor layer
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57080944A JPS58197877A (ja) | 1982-05-14 | 1982-05-14 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57080944A JPS58197877A (ja) | 1982-05-14 | 1982-05-14 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58197877A JPS58197877A (ja) | 1983-11-17 |
JPH0247854B2 true JPH0247854B2 (enrdf_load_stackoverflow) | 1990-10-23 |
Family
ID=13732596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57080944A Granted JPS58197877A (ja) | 1982-05-14 | 1982-05-14 | 半導体集積回路装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58197877A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4498227A (en) * | 1983-07-05 | 1985-02-12 | Fairchild Camera & Instrument Corporation | Wafer fabrication by implanting through protective layer |
US4536945A (en) * | 1983-11-02 | 1985-08-27 | National Semiconductor Corporation | Process for producing CMOS structures with Schottky bipolar transistors |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289550A (en) * | 1979-05-25 | 1981-09-15 | Raytheon Company | Method of forming closely spaced device regions utilizing selective etching and diffusion |
-
1982
- 1982-05-14 JP JP57080944A patent/JPS58197877A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58197877A (ja) | 1983-11-17 |
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