JPH0247854B2 - - Google Patents

Info

Publication number
JPH0247854B2
JPH0247854B2 JP57080944A JP8094482A JPH0247854B2 JP H0247854 B2 JPH0247854 B2 JP H0247854B2 JP 57080944 A JP57080944 A JP 57080944A JP 8094482 A JP8094482 A JP 8094482A JP H0247854 B2 JPH0247854 B2 JP H0247854B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
film
semiconductor layer
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57080944A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58197877A (ja
Inventor
Tadashi Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57080944A priority Critical patent/JPS58197877A/ja
Publication of JPS58197877A publication Critical patent/JPS58197877A/ja
Publication of JPH0247854B2 publication Critical patent/JPH0247854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57080944A 1982-05-14 1982-05-14 半導体集積回路装置の製造方法 Granted JPS58197877A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080944A JPS58197877A (ja) 1982-05-14 1982-05-14 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080944A JPS58197877A (ja) 1982-05-14 1982-05-14 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58197877A JPS58197877A (ja) 1983-11-17
JPH0247854B2 true JPH0247854B2 (enrdf_load_stackoverflow) 1990-10-23

Family

ID=13732596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080944A Granted JPS58197877A (ja) 1982-05-14 1982-05-14 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58197877A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498227A (en) * 1983-07-05 1985-02-12 Fairchild Camera & Instrument Corporation Wafer fabrication by implanting through protective layer
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion

Also Published As

Publication number Publication date
JPS58197877A (ja) 1983-11-17

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