JPS58197782A - 半導体受光装置の製造方法 - Google Patents

半導体受光装置の製造方法

Info

Publication number
JPS58197782A
JPS58197782A JP57080372A JP8037282A JPS58197782A JP S58197782 A JPS58197782 A JP S58197782A JP 57080372 A JP57080372 A JP 57080372A JP 8037282 A JP8037282 A JP 8037282A JP S58197782 A JPS58197782 A JP S58197782A
Authority
JP
Japan
Prior art keywords
layer
receiving device
semiconductor light
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57080372A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0159747B2 (enrdf_load_html_response
Inventor
Tsugunori Takahashi
鷹箸　継典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57080372A priority Critical patent/JPS58197782A/ja
Publication of JPS58197782A publication Critical patent/JPS58197782A/ja
Publication of JPH0159747B2 publication Critical patent/JPH0159747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
JP57080372A 1982-05-13 1982-05-13 半導体受光装置の製造方法 Granted JPS58197782A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080372A JPS58197782A (ja) 1982-05-13 1982-05-13 半導体受光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080372A JPS58197782A (ja) 1982-05-13 1982-05-13 半導体受光装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58197782A true JPS58197782A (ja) 1983-11-17
JPH0159747B2 JPH0159747B2 (enrdf_load_html_response) 1989-12-19

Family

ID=13716442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080372A Granted JPS58197782A (ja) 1982-05-13 1982-05-13 半導体受光装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58197782A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441091A (en) * 1977-09-08 1979-03-31 Matsushita Electronics Corp Semiconductor photoelectric transducer
JPS54110792A (en) * 1978-02-17 1979-08-30 Mitsubishi Electric Corp Avalanche photo diode
JPS5586170A (en) * 1978-12-25 1980-06-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light-receiving element
JPS5680279A (en) * 1979-11-30 1981-07-01 Sankyo Co Pinball game machine
JPS56158488A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441091A (en) * 1977-09-08 1979-03-31 Matsushita Electronics Corp Semiconductor photoelectric transducer
JPS54110792A (en) * 1978-02-17 1979-08-30 Mitsubishi Electric Corp Avalanche photo diode
JPS5586170A (en) * 1978-12-25 1980-06-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light-receiving element
JPS5680279A (en) * 1979-11-30 1981-07-01 Sankyo Co Pinball game machine
JPS56158488A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295216A (ja) * 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法

Also Published As

Publication number Publication date
JPH0159747B2 (enrdf_load_html_response) 1989-12-19

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