JPS58196060A - 薄膜半導体装置 - Google Patents

薄膜半導体装置

Info

Publication number
JPS58196060A
JPS58196060A JP57078851A JP7885182A JPS58196060A JP S58196060 A JPS58196060 A JP S58196060A JP 57078851 A JP57078851 A JP 57078851A JP 7885182 A JP7885182 A JP 7885182A JP S58196060 A JPS58196060 A JP S58196060A
Authority
JP
Japan
Prior art keywords
thin film
film semiconductor
electrode
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57078851A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357952B2 (enrdf_load_stackoverflow
Inventor
Yutaka Yamauchi
豊 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57078851A priority Critical patent/JPS58196060A/ja
Priority to US06/492,675 priority patent/US4570332A/en
Priority to DE19833317108 priority patent/DE3317108A1/de
Publication of JPS58196060A publication Critical patent/JPS58196060A/ja
Publication of JPS6357952B2 publication Critical patent/JPS6357952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57078851A 1982-05-10 1982-05-10 薄膜半導体装置 Granted JPS58196060A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57078851A JPS58196060A (ja) 1982-05-10 1982-05-10 薄膜半導体装置
US06/492,675 US4570332A (en) 1982-05-10 1983-05-09 Method of forming contact to thin film semiconductor device
DE19833317108 DE3317108A1 (de) 1982-05-10 1983-05-10 Duennfilm-halbleiterbauteil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57078851A JPS58196060A (ja) 1982-05-10 1982-05-10 薄膜半導体装置

Publications (2)

Publication Number Publication Date
JPS58196060A true JPS58196060A (ja) 1983-11-15
JPS6357952B2 JPS6357952B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=13673324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57078851A Granted JPS58196060A (ja) 1982-05-10 1982-05-10 薄膜半導体装置

Country Status (1)

Country Link
JP (1) JPS58196060A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113975A (ja) * 1983-11-25 1985-06-20 Matsushita Electric Ind Co Ltd 薄膜光起電力素子
JPS6191971A (ja) * 1984-10-12 1986-05-10 Fuji Electric Co Ltd 太陽電池装置の製造方法
JPS61260683A (ja) * 1985-05-03 1986-11-18 シーメンス　ソーラー　インダストリーズ，エル．ピー． 薄膜太陽モジユ−ル及びその製造方法
JPS6265479A (ja) * 1985-09-18 1987-03-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法
JPS6355451U (enrdf_load_stackoverflow) * 1986-09-27 1988-04-13
JPS6413740U (enrdf_load_stackoverflow) * 1987-07-17 1989-01-24

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856372A (enrdf_load_stackoverflow) * 1971-11-16 1973-08-08
JPS5778852A (en) * 1980-11-06 1982-05-17 Nidek Kk Binocular inverted image lens type photocoagulator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856372A (enrdf_load_stackoverflow) * 1971-11-16 1973-08-08
JPS5778852A (en) * 1980-11-06 1982-05-17 Nidek Kk Binocular inverted image lens type photocoagulator

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113975A (ja) * 1983-11-25 1985-06-20 Matsushita Electric Ind Co Ltd 薄膜光起電力素子
JPS6191971A (ja) * 1984-10-12 1986-05-10 Fuji Electric Co Ltd 太陽電池装置の製造方法
JPS61260683A (ja) * 1985-05-03 1986-11-18 シーメンス　ソーラー　インダストリーズ，エル．ピー． 薄膜太陽モジユ−ル及びその製造方法
JPS6265479A (ja) * 1985-09-18 1987-03-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法
JPS6355451U (enrdf_load_stackoverflow) * 1986-09-27 1988-04-13
JPS6413740U (enrdf_load_stackoverflow) * 1987-07-17 1989-01-24

Also Published As

Publication number Publication date
JPS6357952B2 (enrdf_load_stackoverflow) 1988-11-14

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