JPS58192348A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58192348A
JPS58192348A JP57075902A JP7590282A JPS58192348A JP S58192348 A JPS58192348 A JP S58192348A JP 57075902 A JP57075902 A JP 57075902A JP 7590282 A JP7590282 A JP 7590282A JP S58192348 A JPS58192348 A JP S58192348A
Authority
JP
Japan
Prior art keywords
oxide film
thick oxide
region
mask
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57075902A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6238857B2 (enExample
Inventor
Hiroyasu Azuma
東　寛保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57075902A priority Critical patent/JPS58192348A/ja
Publication of JPS58192348A publication Critical patent/JPS58192348A/ja
Publication of JPS6238857B2 publication Critical patent/JPS6238857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0128—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
JP57075902A 1982-05-06 1982-05-06 半導体装置の製造方法 Granted JPS58192348A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57075902A JPS58192348A (ja) 1982-05-06 1982-05-06 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57075902A JPS58192348A (ja) 1982-05-06 1982-05-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58192348A true JPS58192348A (ja) 1983-11-09
JPS6238857B2 JPS6238857B2 (enExample) 1987-08-20

Family

ID=13589726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075902A Granted JPS58192348A (ja) 1982-05-06 1982-05-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58192348A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004701A (en) * 1988-01-29 1991-04-02 Nec Corporation Method of forming isolation region in integrated circuit semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004701A (en) * 1988-01-29 1991-04-02 Nec Corporation Method of forming isolation region in integrated circuit semiconductor device

Also Published As

Publication number Publication date
JPS6238857B2 (enExample) 1987-08-20

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