JPS58192345A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58192345A JPS58192345A JP7516682A JP7516682A JPS58192345A JP S58192345 A JPS58192345 A JP S58192345A JP 7516682 A JP7516682 A JP 7516682A JP 7516682 A JP7516682 A JP 7516682A JP S58192345 A JPS58192345 A JP S58192345A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active region
- silicon
- semiconductor device
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 6
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 9
- 239000011800 void material Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000052 vinegar Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000001020 plasma etching Methods 0.000 abstract description 7
- 239000000243 solution Substances 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 53
- 239000013078 crystal Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241000218645 Cedrus Species 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 244000061508 Eriobotrya japonica Species 0.000 description 1
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910018537 Si SiOx Inorganic materials 0.000 description 1
- 238000001467 acupuncture Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229940021013 electrolyte solution Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7516682A JPS58192345A (ja) | 1982-05-07 | 1982-05-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7516682A JPS58192345A (ja) | 1982-05-07 | 1982-05-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58192345A true JPS58192345A (ja) | 1983-11-09 |
| JPS6310895B2 JPS6310895B2 (enrdf_load_stackoverflow) | 1988-03-10 |
Family
ID=13568338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7516682A Granted JPS58192345A (ja) | 1982-05-07 | 1982-05-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58192345A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125039A (ja) * | 1984-11-21 | 1986-06-12 | Nec Corp | 半導体装置の製造方法 |
| JPS61198743A (ja) * | 1985-02-28 | 1986-09-03 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
| JPS629644A (ja) * | 1985-07-05 | 1987-01-17 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS62229856A (ja) * | 1985-11-07 | 1987-10-08 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | シリコン島状部の埋設壁分離 |
| JP2006100322A (ja) * | 2004-09-28 | 2006-04-13 | Seiko Epson Corp | 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法 |
| JP2014515192A (ja) * | 2011-04-14 | 2014-06-26 | ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | 水平部材を含むスペーサを有するウェハ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102276A (enrdf_load_stackoverflow) * | 1974-01-09 | 1975-08-13 |
-
1982
- 1982-05-07 JP JP7516682A patent/JPS58192345A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102276A (enrdf_load_stackoverflow) * | 1974-01-09 | 1975-08-13 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125039A (ja) * | 1984-11-21 | 1986-06-12 | Nec Corp | 半導体装置の製造方法 |
| JPS61198743A (ja) * | 1985-02-28 | 1986-09-03 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
| JPS629644A (ja) * | 1985-07-05 | 1987-01-17 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS62229856A (ja) * | 1985-11-07 | 1987-10-08 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | シリコン島状部の埋設壁分離 |
| JP2006100322A (ja) * | 2004-09-28 | 2006-04-13 | Seiko Epson Corp | 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法 |
| JP2014515192A (ja) * | 2011-04-14 | 2014-06-26 | ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | 水平部材を含むスペーサを有するウェハ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310895B2 (enrdf_load_stackoverflow) | 1988-03-10 |
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