JPS5818784B2 - ハンドウタイソシ ノ デンキヨクハイセンコウゾウ - Google Patents

ハンドウタイソシ ノ デンキヨクハイセンコウゾウ

Info

Publication number
JPS5818784B2
JPS5818784B2 JP47084460A JP8446072A JPS5818784B2 JP S5818784 B2 JPS5818784 B2 JP S5818784B2 JP 47084460 A JP47084460 A JP 47084460A JP 8446072 A JP8446072 A JP 8446072A JP S5818784 B2 JPS5818784 B2 JP S5818784B2
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
type
semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47084460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS4940860A (enrdf_load_stackoverflow
Inventor
生嶋康孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP47084460A priority Critical patent/JPS5818784B2/ja
Publication of JPS4940860A publication Critical patent/JPS4940860A/ja
Publication of JPS5818784B2 publication Critical patent/JPS5818784B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP47084460A 1972-08-25 1972-08-25 ハンドウタイソシ ノ デンキヨクハイセンコウゾウ Expired JPS5818784B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP47084460A JPS5818784B2 (ja) 1972-08-25 1972-08-25 ハンドウタイソシ ノ デンキヨクハイセンコウゾウ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47084460A JPS5818784B2 (ja) 1972-08-25 1972-08-25 ハンドウタイソシ ノ デンキヨクハイセンコウゾウ

Publications (2)

Publication Number Publication Date
JPS4940860A JPS4940860A (enrdf_load_stackoverflow) 1974-04-17
JPS5818784B2 true JPS5818784B2 (ja) 1983-04-14

Family

ID=13831223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47084460A Expired JPS5818784B2 (ja) 1972-08-25 1972-08-25 ハンドウタイソシ ノ デンキヨクハイセンコウゾウ

Country Status (1)

Country Link
JP (1) JPS5818784B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116675A (en) * 1975-04-05 1976-10-14 Fujitsu Ltd Manufacturing method for a semiconductor device
JPS55165406U (enrdf_load_stackoverflow) * 1979-05-16 1980-11-28
JPS55157240A (en) * 1979-05-25 1980-12-06 Nec Corp Semiconductor device
JPS57172762A (en) * 1981-04-16 1982-10-23 Matsushita Electronics Corp Semiconductor device and manufacture thereof
JPS5825729U (ja) * 1981-08-14 1983-02-18 トヨタ自動車株式会社 自動車用燃料タンクの濾過装置
US4810820A (en) * 1987-08-12 1989-03-07 Mobay Corporation Process for the production of polyisocyanates containing allophanate groups

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5148757B2 (enrdf_load_stackoverflow) * 1971-10-05 1976-12-22

Also Published As

Publication number Publication date
JPS4940860A (enrdf_load_stackoverflow) 1974-04-17

Similar Documents

Publication Publication Date Title
EP0083816B1 (en) Semiconductor device having an interconnection pattern
JPH0355984B2 (enrdf_load_stackoverflow)
JPS59124141A (ja) 半導体装置の製造方法
JPH0719838B2 (ja) 半導体装置およびその製造方法
JPH0812865B2 (ja) バイポーラトランジスタとその製造方法
JPH025432A (ja) 半導体装置の製造方法
JPS5818784B2 (ja) ハンドウタイソシ ノ デンキヨクハイセンコウゾウ
JPH0239091B2 (enrdf_load_stackoverflow)
JPS6220711B2 (enrdf_load_stackoverflow)
JP2659190B2 (ja) 半導体装置の製造方法
JP2654056B2 (ja) 半導体装置の製造方法
JP3070392B2 (ja) 半導体装置
KR0149130B1 (ko) 기둥형 바이폴라 트랜지스터 및 그의 제조방법
JP2621607B2 (ja) 半導体装置の製造方法
JPH0554263B2 (enrdf_load_stackoverflow)
JPS62120040A (ja) 半導体装置の製造方法
JPH0338742B2 (enrdf_load_stackoverflow)
JP2697221B2 (ja) 半導体装置
JP2556155B2 (ja) 半導体装置の製造方法
JPS6159871A (ja) 半導体装置の製造方法
JPH0669044B2 (ja) 半導体装置の製造方法
JPS60244036A (ja) 半導体装置とその製造方法
JPS5919374A (ja) 半導体装置の製造方法
JPS61184872A (ja) 半導体装置の製造方法
JPH0582071B2 (enrdf_load_stackoverflow)