JPS58180019A - 半導体基体およびその製造方法 - Google Patents
半導体基体およびその製造方法Info
- Publication number
- JPS58180019A JPS58180019A JP57063757A JP6375782A JPS58180019A JP S58180019 A JPS58180019 A JP S58180019A JP 57063757 A JP57063757 A JP 57063757A JP 6375782 A JP6375782 A JP 6375782A JP S58180019 A JPS58180019 A JP S58180019A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating
- rectangular
- opening
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/3816—
-
- H10P14/3802—
-
- H10P14/3238—
-
- H10P14/3248—
-
- H10P14/3411—
-
- H10P14/3458—
-
- H10P14/3814—
-
- H10P14/382—
Landscapes
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57063757A JPS58180019A (ja) | 1982-04-15 | 1982-04-15 | 半導体基体およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57063757A JPS58180019A (ja) | 1982-04-15 | 1982-04-15 | 半導体基体およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58180019A true JPS58180019A (ja) | 1983-10-21 |
| JPH0413848B2 JPH0413848B2 (cg-RX-API-DMAC10.html) | 1992-03-11 |
Family
ID=13238579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57063757A Granted JPS58180019A (ja) | 1982-04-15 | 1982-04-15 | 半導体基体およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58180019A (cg-RX-API-DMAC10.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6163015A (ja) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Soi用シ−ド構造の製造方法 |
| JPS61234026A (ja) * | 1985-04-10 | 1986-10-18 | Agency Of Ind Science & Technol | 半導体単結晶成長方法 |
| US5401683A (en) * | 1987-12-04 | 1995-03-28 | Agency Of Industrial Science And Technology | Method of manufacturing a multi-layered semiconductor substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126914A (en) * | 1980-03-11 | 1981-10-05 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1982
- 1982-04-15 JP JP57063757A patent/JPS58180019A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126914A (en) * | 1980-03-11 | 1981-10-05 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6163015A (ja) * | 1984-09-04 | 1986-04-01 | Agency Of Ind Science & Technol | Soi用シ−ド構造の製造方法 |
| JPS61234026A (ja) * | 1985-04-10 | 1986-10-18 | Agency Of Ind Science & Technol | 半導体単結晶成長方法 |
| US5401683A (en) * | 1987-12-04 | 1995-03-28 | Agency Of Industrial Science And Technology | Method of manufacturing a multi-layered semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0413848B2 (cg-RX-API-DMAC10.html) | 1992-03-11 |
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