JPS58171838A - 半導体装置用リ−ドフレ−ム - Google Patents
半導体装置用リ−ドフレ−ムInfo
- Publication number
- JPS58171838A JPS58171838A JP57054892A JP5489282A JPS58171838A JP S58171838 A JPS58171838 A JP S58171838A JP 57054892 A JP57054892 A JP 57054892A JP 5489282 A JP5489282 A JP 5489282A JP S58171838 A JPS58171838 A JP S58171838A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- metal
- metal thin
- lead frame
- metal piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
本発明は樹脂モールドされ1.成る半導体装置に使用す
るリードフレームの構造に関する。
るリードフレームの構造に関する。
従来、樹脂封止型半導体装置を製造する場合、第1図の
半導体装置の断面図に示すように、金属製の半導体装置
用リードフレーム(以下単にIJ −ドフレームと称す
)の半導体ペレット搭載部3に半導体ペレット4をボン
ディングし、かつこのベレットの各電極とリードフレー
ムを形、成する各内部り、−ド1の先端部とを金ワイヤ
5でそれぞれ接続し、半導体ペレット4を中心に樹脂6
でモールドして半導体装置を製造していり ところで、上記従来のリードフレームは、あらかじめ半
導体ペレット搭載部3及び内部リード1の先端部に金ま
たは、#の金属薄膜をイッキ等により部分的に施してお
く必要がある。
半導体装置の断面図に示すように、金属製の半導体装置
用リードフレーム(以下単にIJ −ドフレームと称す
)の半導体ペレット搭載部3に半導体ペレット4をボン
ディングし、かつこのベレットの各電極とリードフレー
ムを形、成する各内部り、−ド1の先端部とを金ワイヤ
5でそれぞれ接続し、半導体ペレット4を中心に樹脂6
でモールドして半導体装置を製造していり ところで、上記従来のリードフレームは、あらかじめ半
導体ペレット搭載部3及び内部リード1の先端部に金ま
たは、#の金属薄膜をイッキ等により部分的に施してお
く必要がある。
即ち、半導体ペレットをボンディングする場合には、金
メッキまたは金テープを置いた銀メ。ツキ上に、半導体
ペレット裏面をこすりつけてAu−8i合金、 Ag
−Au−8i合金を作り、この合金によって半導体ペレ
ットをリードフレームに固着し、また金ワイヤによるボ
ンディングを行っ【いる。そして、このリードフレーム
の部分メッキは、弾力性のある樹脂ゴムを、素材、とし
、たメッキマスク用治具により、リードフレームの部分
メッキエリア以外をシールすることで成されている。し
かし、リードフ、レームは、小さい上に高精度なメツー
キエリアを必要とするにもかかわらず、そのエリアな決
める位置精度は、メッキマスク用治具の構造上また治具
素材の特性上良くないものであった。即ちリード側面部
へのメッキ液の漏れ、またマスク用治具の摩耗によるメ
ッキ液の漏れ岬により、メ。
メッキまたは金テープを置いた銀メ。ツキ上に、半導体
ペレット裏面をこすりつけてAu−8i合金、 Ag
−Au−8i合金を作り、この合金によって半導体ペレ
ットをリードフレームに固着し、また金ワイヤによるボ
ンディングを行っ【いる。そして、このリードフレーム
の部分メッキは、弾力性のある樹脂ゴムを、素材、とし
、たメッキマスク用治具により、リードフレームの部分
メッキエリア以外をシールすることで成されている。し
かし、リードフ、レームは、小さい上に高精度なメツー
キエリアを必要とするにもかかわらず、そのエリアな決
める位置精度は、メッキマスク用治具の構造上また治具
素材の特性上良くないものであった。即ちリード側面部
へのメッキ液の漏れ、またマスク用治具の摩耗によるメ
ッキ液の漏れ岬により、メ。
キの金属薄膜がリードフレームの樹脂モールド領域外に
まで出る恐れがあった。さらに最近の様に集積度の高い
半導体ペレッ) (”y )サイズが大きい)を搭載す
るリードフレームは、第2図の断面図に示すように半導
体ペレット搭載部3が大きくなることから、その分内部
リードlが短かくなり、そのためメッキの金属薄lI2
がいっそう樹脂モールド外に出易い状態となっていた。
まで出る恐れがあった。さらに最近の様に集積度の高い
半導体ペレッ) (”y )サイズが大きい)を搭載す
るリードフレームは、第2図の断面図に示すように半導
体ペレット搭載部3が大きくなることから、その分内部
リードlが短かくなり、そのためメッキの金属薄lI2
がいっそう樹脂モールド外に出易い状態となっていた。
このようにして樹脂モールド外に出たメッキの金属薄膜
は、外部リード処理としての半田ティップ又は8nメ、
キ醇の処理を行った場合、その処理被膜のリードフレー
ム(外部リード)への密着性を落し、牛田付は性も悪く
しており、さらに悪いことにメッキの金属被膜がAgの
場合、Agは外部リード間でマイグレーシ冒ンを起し、
長期にわたって電気特性を一定に保つことを困難KL、
’Cいた。従って、これらのリードフレームで作られた
半導体装置は信頼度の低いものとなっていた。
は、外部リード処理としての半田ティップ又は8nメ、
キ醇の処理を行った場合、その処理被膜のリードフレー
ム(外部リード)への密着性を落し、牛田付は性も悪く
しており、さらに悪いことにメッキの金属被膜がAgの
場合、Agは外部リード間でマイグレーシ冒ンを起し、
長期にわたって電気特性を一定に保つことを困難KL、
’Cいた。従って、これらのリードフレームで作られた
半導体装置は信頼度の低いものとなっていた。
本発明の目的はリードフレームの内部に施したメッキ等
による金属薄膜が、樹脂モールド外に出ないようにした
信頼性の高い半導体装置用リードフレームを提供するこ
とにある。
による金属薄膜が、樹脂モールド外に出ないようにした
信頼性の高い半導体装置用リードフレームを提供するこ
とにある。
このような目的を達成するために、本発明のリードフレ
ームは、内部リード部の少 なくとも表1iIIIll
に金属片を固着し、この金属片の表面に金属*mが形成
されていることを特徴とするものである。
ームは、内部リード部の少 なくとも表1iIIIll
に金属片を固着し、この金属片の表面に金属*mが形成
されていることを特徴とするものである。
以下本発明を実施例の図面に基づいて説明する。
第31¥1は本発明のリードフレームを用いて作成され
た半導体装置の断面図である。金属片7は、メッキによ
り形成された金属薄膜2′を有する金属板を所定の形状
にプレス加工またはエツチング加工して形成し、リード
フレームの内部リードlの先f4A部上面に搭載し固着
した。この金属片7の固着は、固相接合、スポット溶接
などによって容易に行うことができる。又、リードフレ
ームの半導体ペレット搭載s3のメッキ処理は従来と同
様の方法で上記金属片7の播載前に行っておく。半導体
ペレット搭載部3は周囲のリードと隔離されているため
、メッキ時のマスクのシール性は十分であり、メッキ液
が漏れて樹脂モールド外に出ることはない。
た半導体装置の断面図である。金属片7は、メッキによ
り形成された金属薄膜2′を有する金属板を所定の形状
にプレス加工またはエツチング加工して形成し、リード
フレームの内部リードlの先f4A部上面に搭載し固着
した。この金属片7の固着は、固相接合、スポット溶接
などによって容易に行うことができる。又、リードフレ
ームの半導体ペレット搭載s3のメッキ処理は従来と同
様の方法で上記金属片7の播載前に行っておく。半導体
ペレット搭載部3は周囲のリードと隔離されているため
、メッキ時のマスクのシール性は十分であり、メッキ液
が漏れて樹脂モールド外に出ることはない。
以上のように、内部リード部に金属片を固着することに
よって、半導体ペレット搭載部3の金属薄膜2と金属片
7の金属薄ji12 /の形成がそれぞれ別々に行われ
るため、リードフレーム内部の金属薄膜(Au又はAg
)が樹脂モールド外にはみ出ることはなく、1また金
属片7の板厚を自由に変えることが可能であり、ワイヤ
ボンディングυ容易な高さに設計できる。更にこの金属
片7に熱伝導の良い材料を選択し、内部リード部−面に
広げることにより、その半導体装置の熱抵抗を低くする
、ことができる。従って本発明のリードフレームを用い
れば信頼性の高い半導体装置となる。
よって、半導体ペレット搭載部3の金属薄膜2と金属片
7の金属薄ji12 /の形成がそれぞれ別々に行われ
るため、リードフレーム内部の金属薄膜(Au又はAg
)が樹脂モールド外にはみ出ることはなく、1また金
属片7の板厚を自由に変えることが可能であり、ワイヤ
ボンディングυ容易な高さに設計できる。更にこの金属
片7に熱伝導の良い材料を選択し、内部リード部−面に
広げることにより、その半導体装置の熱抵抗を低くする
、ことができる。従って本発明のリードフレームを用い
れば信頼性の高い半導体装置となる。
本実施例に示した金属片7の金属薄膜2′は、メッキに
よる場合について記述したがこれに限るものではなく、
固相接合(クラッド材料)によるものであってもよい。
よる場合について記述したがこれに限るものではなく、
固相接合(クラッド材料)によるものであってもよい。
又、金属片7は一層のみ年令ならず複数層になっていて
も本発明の効果は失わない。
も本発明の効果は失わない。
更に金属薄膜2′は表1kJsK、限るものでないこと
は言うまでもないことである。
は言うまでもないことである。
第1図、第2図は従来のリードフレームな用(・た半導
体装置の断面図であり、第3図は本発明に係るリードフ
レームの一実施例を用いた半導体装置の断面図である。 1・・・・・・内部リード、2,2′・・・・・・金属
薄膜、3・・・半導体ペレット搭載部、4・・・・・・
半導′体ペレ、ト、5・・・・・・金ワイヤ、6・・・
・・・樹脂、7・・・・・・金属片。
体装置の断面図であり、第3図は本発明に係るリードフ
レームの一実施例を用いた半導体装置の断面図である。 1・・・・・・内部リード、2,2′・・・・・・金属
薄膜、3・・・半導体ペレット搭載部、4・・・・・・
半導′体ペレ、ト、5・・・・・・金ワイヤ、6・・・
・・・樹脂、7・・・・・・金属片。
Claims (1)
- 【特許請求の範囲】 樹脂刺止皺の半導体装置に使用するリードフレームにお
い【、内部リード部の少 なくとも表面111に金属片
を固着し、この傘、翼片の少なくとも表面側には、金5
属薄膜が形成されてい、ることを特徴とする半導体装置
用リードフレーム。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57054892A JPS58171838A (ja) | 1982-04-02 | 1982-04-02 | 半導体装置用リ−ドフレ−ム |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57054892A JPS58171838A (ja) | 1982-04-02 | 1982-04-02 | 半導体装置用リ−ドフレ−ム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58171838A true JPS58171838A (ja) | 1983-10-08 |
JPS634945B2 JPS634945B2 (ja) | 1988-02-01 |
Family
ID=12983241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57054892A Granted JPS58171838A (ja) | 1982-04-02 | 1982-04-02 | 半導体装置用リ−ドフレ−ム |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58171838A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006018671A1 (en) * | 2004-08-19 | 2006-02-23 | Infineon Technologies Ag | Mixed wire semiconductor lead frame package |
WO2010043580A1 (en) | 2008-10-13 | 2010-04-22 | Tyco Electronics Amp Gmbh | Leadframe for electronic components |
ITMI20131530A1 (it) * | 2013-09-17 | 2015-03-18 | St Microelectronics Srl | Dispositivo elettronico con elemento di interfaccia bimetallico per wire-bonding |
CN106024745A (zh) * | 2016-07-01 | 2016-10-12 | 长电科技(宿迁)有限公司 | 一种半导体管脚贴装结构及其焊接方法 |
CN108493178A (zh) * | 2018-02-06 | 2018-09-04 | 昆山市品能精密电子有限公司 | 封装到位的集成电路支架结构及其制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52129465U (ja) * | 1976-03-26 | 1977-10-01 |
-
1982
- 1982-04-02 JP JP57054892A patent/JPS58171838A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52129465U (ja) * | 1976-03-26 | 1977-10-01 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006018671A1 (en) * | 2004-08-19 | 2006-02-23 | Infineon Technologies Ag | Mixed wire semiconductor lead frame package |
US8105932B2 (en) | 2004-08-19 | 2012-01-31 | Infineon Technologies Ag | Mixed wire semiconductor lead frame package |
US9087827B2 (en) | 2004-08-19 | 2015-07-21 | Infineon Technologies Ag | Mixed wire semiconductor lead frame package |
WO2010043580A1 (en) | 2008-10-13 | 2010-04-22 | Tyco Electronics Amp Gmbh | Leadframe for electronic components |
CN102177581A (zh) * | 2008-10-13 | 2011-09-07 | 泰科电子Amp有限责任公司 | 用于电子元件的引线框架 |
JP2012505537A (ja) * | 2008-10-13 | 2012-03-01 | タイコ エレクトロニクス アンプ ゲゼルシャフト ミット ベシュレンクテル ハウツンク | 電子部品用リードフレーム |
US8927342B2 (en) | 2008-10-13 | 2015-01-06 | Tyco Electronics Amp Gmbh | Leadframe for electronic components |
ITMI20131530A1 (it) * | 2013-09-17 | 2015-03-18 | St Microelectronics Srl | Dispositivo elettronico con elemento di interfaccia bimetallico per wire-bonding |
US9184150B2 (en) | 2013-09-17 | 2015-11-10 | Stmicroelectronics S.R.L. | Electronic device with bimetallic interface element for wire bonding |
CN106024745A (zh) * | 2016-07-01 | 2016-10-12 | 长电科技(宿迁)有限公司 | 一种半导体管脚贴装结构及其焊接方法 |
CN108493178A (zh) * | 2018-02-06 | 2018-09-04 | 昆山市品能精密电子有限公司 | 封装到位的集成电路支架结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS634945B2 (ja) | 1988-02-01 |
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