JPS58165341A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58165341A
JPS58165341A JP57048573A JP4857382A JPS58165341A JP S58165341 A JPS58165341 A JP S58165341A JP 57048573 A JP57048573 A JP 57048573A JP 4857382 A JP4857382 A JP 4857382A JP S58165341 A JPS58165341 A JP S58165341A
Authority
JP
Japan
Prior art keywords
groove
insulating film
semiconductor device
substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57048573A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6412110B2 (enExample
Inventor
Hiroshi Iwai
洋 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57048573A priority Critical patent/JPS58165341A/ja
Priority to DE8383301239T priority patent/DE3380002D1/de
Priority to EP83301239A priority patent/EP0090520B1/en
Priority to US06/475,944 priority patent/US4532696A/en
Publication of JPS58165341A publication Critical patent/JPS58165341A/ja
Publication of JPS6412110B2 publication Critical patent/JPS6412110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H10W10/00—
    • H10W10/01—
    • H10W10/0143—
    • H10W10/0145—
    • H10W10/0148—
    • H10W10/17—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP57048573A 1982-03-26 1982-03-26 半導体装置の製造方法 Granted JPS58165341A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57048573A JPS58165341A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法
DE8383301239T DE3380002D1 (en) 1982-03-26 1983-03-08 A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate
EP83301239A EP0090520B1 (en) 1982-03-26 1983-03-08 A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate
US06/475,944 US4532696A (en) 1982-03-26 1983-03-16 Method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57048573A JPS58165341A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58165341A true JPS58165341A (ja) 1983-09-30
JPS6412110B2 JPS6412110B2 (enExample) 1989-02-28

Family

ID=12807132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048573A Granted JPS58165341A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4532696A (enExample)
EP (1) EP0090520B1 (enExample)
JP (1) JPS58165341A (enExample)
DE (1) DE3380002D1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197375A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置及びその製造方法
JPH05226466A (ja) * 1992-02-10 1993-09-03 Nec Corp 半導体装置の製造方法
JPH06177239A (ja) * 1992-07-30 1994-06-24 Nec Corp トレンチ素子分離構造の製造方法
JP2006319296A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の素子分離膜およびその形成方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491486A (en) * 1981-09-17 1985-01-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
FR2568723B1 (fr) * 1984-08-03 1987-06-05 Commissariat Energie Atomique Circuit integre notamment de type mos et son procede de fabrication
US4599136A (en) * 1984-10-03 1986-07-08 International Business Machines Corporation Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
US4656730A (en) * 1984-11-23 1987-04-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating CMOS devices
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
US4753901A (en) * 1985-11-15 1988-06-28 Ncr Corporation Two mask technique for planarized trench oxide isolation of integrated devices
JPS62142318A (ja) * 1985-12-17 1987-06-25 Mitsubishi Electric Corp 半導体装置の製造方法
US4839311A (en) * 1987-08-14 1989-06-13 National Semiconductor Corporation Etch back detection
JPH0358484A (ja) * 1989-07-27 1991-03-13 Toshiba Corp 半導体装置とその製造方法
TW299475B (enExample) * 1993-03-30 1997-03-01 Siemens Ag
US5849621A (en) 1996-06-19 1998-12-15 Advanced Micro Devices, Inc. Method and structure for isolating semiconductor devices after transistor formation
US6069055A (en) * 1996-07-12 2000-05-30 Matsushita Electric Industrial Co., Ltd. Fabricating method for semiconductor device
US6693331B2 (en) * 1999-11-18 2004-02-17 Intel Corporation Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation
US7491614B2 (en) * 2005-01-13 2009-02-17 International Business Machines Corporation Methods for forming channel stop for deep trench isolation prior to deep trench etch
KR100844228B1 (ko) * 2008-02-26 2008-07-04 광주과학기술원 염모제 조성물 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE158928C (enExample) * 1966-09-26
US4394196A (en) * 1980-07-16 1983-07-19 Tokyo Shibaura Denki Kabushiki Kaisha Method of etching, refilling and etching dielectric grooves for isolating micron size device regions
EP0055521B1 (en) * 1980-11-29 1985-05-22 Kabushiki Kaisha Toshiba Method of filling a groove in a semiconductor substrate
US4415371A (en) * 1980-12-29 1983-11-15 Rockwell International Corporation Method of making sub-micron dimensioned NPN lateral transistor
JPS58132946A (ja) * 1982-02-03 1983-08-08 Toshiba Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63197375A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置及びその製造方法
JPH05226466A (ja) * 1992-02-10 1993-09-03 Nec Corp 半導体装置の製造方法
JPH06177239A (ja) * 1992-07-30 1994-06-24 Nec Corp トレンチ素子分離構造の製造方法
JP2006319296A (ja) * 2005-05-11 2006-11-24 Hynix Semiconductor Inc 半導体素子の素子分離膜およびその形成方法

Also Published As

Publication number Publication date
EP0090520A3 (en) 1985-11-06
EP0090520B1 (en) 1989-05-31
EP0090520A2 (en) 1983-10-05
JPS6412110B2 (enExample) 1989-02-28
DE3380002D1 (en) 1989-07-06
US4532696A (en) 1985-08-06

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