DE3380002D1 - A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate - Google Patents
A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrateInfo
- Publication number
- DE3380002D1 DE3380002D1 DE8383301239T DE3380002T DE3380002D1 DE 3380002 D1 DE3380002 D1 DE 3380002D1 DE 8383301239 T DE8383301239 T DE 8383301239T DE 3380002 T DE3380002 T DE 3380002T DE 3380002 D1 DE3380002 D1 DE 3380002D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- forming
- field region
- semiconductor device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57048573A JPS58165341A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3380002D1 true DE3380002D1 (en) | 1989-07-06 |
Family
ID=12807132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383301239T Expired DE3380002D1 (en) | 1982-03-26 | 1983-03-08 | A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
Country Status (4)
Country | Link |
---|---|
US (1) | US4532696A (de) |
EP (1) | EP0090520B1 (de) |
JP (1) | JPS58165341A (de) |
DE (1) | DE3380002D1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491486A (en) * | 1981-09-17 | 1985-01-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
JPS59123266A (ja) * | 1982-12-28 | 1984-07-17 | Toshiba Corp | Misトランジスタ及びその製造方法 |
FR2568723B1 (fr) * | 1984-08-03 | 1987-06-05 | Commissariat Energie Atomique | Circuit integre notamment de type mos et son procede de fabrication |
US4599136A (en) * | 1984-10-03 | 1986-07-08 | International Business Machines Corporation | Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials |
US4656730A (en) * | 1984-11-23 | 1987-04-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating CMOS devices |
EP0195460B1 (de) * | 1985-03-22 | 1997-07-09 | Nec Corporation | Integrierte Halbleiterschaltung mit Isolationszone |
US4753901A (en) * | 1985-11-15 | 1988-06-28 | Ncr Corporation | Two mask technique for planarized trench oxide isolation of integrated devices |
JPS62142318A (ja) * | 1985-12-17 | 1987-06-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0770713B2 (ja) * | 1987-02-12 | 1995-07-31 | 松下電器産業株式会社 | Mos型半導体装置及びその製造方法 |
US4839311A (en) * | 1987-08-14 | 1989-06-13 | National Semiconductor Corporation | Etch back detection |
JPH0358484A (ja) * | 1989-07-27 | 1991-03-13 | Toshiba Corp | 半導体装置とその製造方法 |
JPH05226466A (ja) * | 1992-02-10 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
JPH06177239A (ja) * | 1992-07-30 | 1994-06-24 | Nec Corp | トレンチ素子分離構造の製造方法 |
TW299475B (de) * | 1993-03-30 | 1997-03-01 | Siemens Ag | |
US5849621A (en) | 1996-06-19 | 1998-12-15 | Advanced Micro Devices, Inc. | Method and structure for isolating semiconductor devices after transistor formation |
US6069055A (en) * | 1996-07-12 | 2000-05-30 | Matsushita Electric Industrial Co., Ltd. | Fabricating method for semiconductor device |
US6693331B2 (en) | 1999-11-18 | 2004-02-17 | Intel Corporation | Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation |
US7491614B2 (en) * | 2005-01-13 | 2009-02-17 | International Business Machines Corporation | Methods for forming channel stop for deep trench isolation prior to deep trench etch |
KR100672156B1 (ko) * | 2005-05-11 | 2007-01-19 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 및 이의 형성방법 |
KR100844228B1 (ko) * | 2008-02-26 | 2008-07-04 | 광주과학기술원 | 염모제 조성물 및 그 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE158928C (de) * | 1966-09-26 | |||
US4394196A (en) * | 1980-07-16 | 1983-07-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of etching, refilling and etching dielectric grooves for isolating micron size device regions |
DE3170644D1 (en) * | 1980-11-29 | 1985-06-27 | Toshiba Kk | Method of filling a groove in a semiconductor substrate |
US4415371A (en) * | 1980-12-29 | 1983-11-15 | Rockwell International Corporation | Method of making sub-micron dimensioned NPN lateral transistor |
JPS58132946A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | 半導体装置の製造方法 |
-
1982
- 1982-03-26 JP JP57048573A patent/JPS58165341A/ja active Granted
-
1983
- 1983-03-08 EP EP83301239A patent/EP0090520B1/de not_active Expired
- 1983-03-08 DE DE8383301239T patent/DE3380002D1/de not_active Expired
- 1983-03-16 US US06/475,944 patent/US4532696A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4532696A (en) | 1985-08-06 |
EP0090520A3 (en) | 1985-11-06 |
EP0090520A2 (de) | 1983-10-05 |
JPS58165341A (ja) | 1983-09-30 |
EP0090520B1 (de) | 1989-05-31 |
JPS6412110B2 (de) | 1989-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |