JPS58165341A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58165341A JPS58165341A JP57048573A JP4857382A JPS58165341A JP S58165341 A JPS58165341 A JP S58165341A JP 57048573 A JP57048573 A JP 57048573A JP 4857382 A JP4857382 A JP 4857382A JP S58165341 A JPS58165341 A JP S58165341A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- insulating film
- semiconductor device
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000011810 insulating material Substances 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims description 39
- 239000007772 electrode material Substances 0.000 claims description 30
- 230000003647 oxidation Effects 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- 239000002344 surface layer Substances 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 239000011229 interlayer Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 50
- 230000002265 prevention Effects 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910052785 arsenic Inorganic materials 0.000 description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- -1 boron ions Chemical class 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007514 turning Methods 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 241000271566 Aves Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- VKCLPVFDVVKEKU-UHFFFAOYSA-N S=[P] Chemical compound S=[P] VKCLPVFDVVKEKU-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003818 cinder Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57048573A JPS58165341A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
EP83301239A EP0090520B1 (de) | 1982-03-26 | 1983-03-08 | Verfahren zur Herstellung einer Halbleiteranordnung mit einer tiefen Isolationszone in einem Halbleiter |
DE8383301239T DE3380002D1 (en) | 1982-03-26 | 1983-03-08 | A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
US06/475,944 US4532696A (en) | 1982-03-26 | 1983-03-16 | Method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57048573A JPS58165341A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58165341A true JPS58165341A (ja) | 1983-09-30 |
JPS6412110B2 JPS6412110B2 (de) | 1989-02-28 |
Family
ID=12807132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57048573A Granted JPS58165341A (ja) | 1982-03-26 | 1982-03-26 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4532696A (de) |
EP (1) | EP0090520B1 (de) |
JP (1) | JPS58165341A (de) |
DE (1) | DE3380002D1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63197375A (ja) * | 1987-02-12 | 1988-08-16 | Matsushita Electric Ind Co Ltd | Mos型半導体装置及びその製造方法 |
JPH05226466A (ja) * | 1992-02-10 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
JPH06177239A (ja) * | 1992-07-30 | 1994-06-24 | Nec Corp | トレンチ素子分離構造の製造方法 |
JP2006319296A (ja) * | 2005-05-11 | 2006-11-24 | Hynix Semiconductor Inc | 半導体素子の素子分離膜およびその形成方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491486A (en) * | 1981-09-17 | 1985-01-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
JPS59123266A (ja) * | 1982-12-28 | 1984-07-17 | Toshiba Corp | Misトランジスタ及びその製造方法 |
FR2568723B1 (fr) * | 1984-08-03 | 1987-06-05 | Commissariat Energie Atomique | Circuit integre notamment de type mos et son procede de fabrication |
US4599136A (en) * | 1984-10-03 | 1986-07-08 | International Business Machines Corporation | Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials |
US4656730A (en) * | 1984-11-23 | 1987-04-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for fabricating CMOS devices |
EP0195460B1 (de) * | 1985-03-22 | 1997-07-09 | Nec Corporation | Integrierte Halbleiterschaltung mit Isolationszone |
US4753901A (en) * | 1985-11-15 | 1988-06-28 | Ncr Corporation | Two mask technique for planarized trench oxide isolation of integrated devices |
JPS62142318A (ja) * | 1985-12-17 | 1987-06-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4839311A (en) * | 1987-08-14 | 1989-06-13 | National Semiconductor Corporation | Etch back detection |
JPH0358484A (ja) * | 1989-07-27 | 1991-03-13 | Toshiba Corp | 半導体装置とその製造方法 |
TW299475B (de) * | 1993-03-30 | 1997-03-01 | Siemens Ag | |
US5849621A (en) | 1996-06-19 | 1998-12-15 | Advanced Micro Devices, Inc. | Method and structure for isolating semiconductor devices after transistor formation |
US6069055A (en) * | 1996-07-12 | 2000-05-30 | Matsushita Electric Industrial Co., Ltd. | Fabricating method for semiconductor device |
US6693331B2 (en) | 1999-11-18 | 2004-02-17 | Intel Corporation | Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation |
US7491614B2 (en) * | 2005-01-13 | 2009-02-17 | International Business Machines Corporation | Methods for forming channel stop for deep trench isolation prior to deep trench etch |
KR100844228B1 (ko) * | 2008-02-26 | 2008-07-04 | 광주과학기술원 | 염모제 조성물 및 그 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE158928C (de) * | 1966-09-26 | |||
US4394196A (en) * | 1980-07-16 | 1983-07-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of etching, refilling and etching dielectric grooves for isolating micron size device regions |
EP0055521B1 (de) * | 1980-11-29 | 1985-05-22 | Kabushiki Kaisha Toshiba | Verfahren zum Füllen einer Rille in einem Halbleitersubstrat |
US4415371A (en) * | 1980-12-29 | 1983-11-15 | Rockwell International Corporation | Method of making sub-micron dimensioned NPN lateral transistor |
JPS58132946A (ja) * | 1982-02-03 | 1983-08-08 | Toshiba Corp | 半導体装置の製造方法 |
-
1982
- 1982-03-26 JP JP57048573A patent/JPS58165341A/ja active Granted
-
1983
- 1983-03-08 DE DE8383301239T patent/DE3380002D1/de not_active Expired
- 1983-03-08 EP EP83301239A patent/EP0090520B1/de not_active Expired
- 1983-03-16 US US06/475,944 patent/US4532696A/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63197375A (ja) * | 1987-02-12 | 1988-08-16 | Matsushita Electric Ind Co Ltd | Mos型半導体装置及びその製造方法 |
JPH05226466A (ja) * | 1992-02-10 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
JPH06177239A (ja) * | 1992-07-30 | 1994-06-24 | Nec Corp | トレンチ素子分離構造の製造方法 |
JP2006319296A (ja) * | 2005-05-11 | 2006-11-24 | Hynix Semiconductor Inc | 半導体素子の素子分離膜およびその形成方法 |
Also Published As
Publication number | Publication date |
---|---|
DE3380002D1 (en) | 1989-07-06 |
JPS6412110B2 (de) | 1989-02-28 |
EP0090520A3 (en) | 1985-11-06 |
US4532696A (en) | 1985-08-06 |
EP0090520B1 (de) | 1989-05-31 |
EP0090520A2 (de) | 1983-10-05 |
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